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參數(shù)資料
| 型號： | HYB 39S16160CT-6 |
| 廠商： | SIEMENS AG |
| 英文描述： | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合)) |
| 中文描述： | 100萬× 16高兆同步DRAM高速圖形應(yīng)用程序（1,600位（1米× 16）同步動態(tài)隨機存儲器（用于高速圖形場合）） |
| 文件頁數(shù)： | 12/19頁 |
| 文件大?。?/td> | 110K |
| 代理商： | HYB 39S16160CT-6 |
HYB 39S16160CT-5.5/-6/-7
16-MBit Synchronous DRAM
Data Book
12
09.99
Electrical Characteristics
Absolute Maximum Ratings
Operating Temperature Range.......................................................................................0 to + 70
°
C
Storage Temperature Range..................................................................................
– 55 to + 150
°
C
Input/Output Voltage......................................................................... – 0.5 to min (
V
DD
+ 0.5, 4.6) V
Power Supply Voltage
V
DD
/
V
DDQ
.............................................................................. – 1.0 to + 4.6 V
Power Dissipation....................................................................................................................... 1 W
Data Out Current (short circuit)............................................................................................... 50 mA
Note:
Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
Notes
1. All voltages are referenced to
V
SS
2.
V
IH
may overshoot to
V
DD
+ 2.0 V for pulse width of < 4 ns with 3.3 V.
V
IL
may undershoot to
– 2.0 V for pulse width < 4.0 ns with 3.3 V. Pulse width measured at 50% with amplitude
measured peak to DC reference.
Recommended Operation and DC Characteristics
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
,
V
DDQ
= 3.3 V
±
0.3 V
Parameter
Symbol
Limit Values
Unit
Notes
min.
max.
V
DD
+ 0.3
0.8
Input High Voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.0
V
1, 2, 3
Input Low Voltage
Output High Voltage (
I
OUT
= – 2.0 mA)
Output Low Voltage (
I
OUT
= 2.0 mA)
Input Leakage Current, any input
(0 V <
V
IN
<
V
DDQ
, all other inputs = 0 V)
Output Leakage Current
(DQ is disabled, 0 V <
V
OUT
<
V
DD
)
– 0.3
V
1, 2, 3
2.4
–
V
3
–
0.4
V
μ
A
3
– 5
5
–
I
O(L)
– 5
5
μ
A
–
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| HYB 39S16160CT-7 | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合)) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S16160CT-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications |
| HYB39S16160CT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications |
| HYB39S16160CT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16320TQ-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Special Mode Registers Two color registers Burst Read with Single Write Operation |
| HYB39S16320TQ-5.5 | 制造商:Siemens 功能描述:Electronic Component |
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