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參數(shù)資料
| 型號： | HYB 39S16160CT-6 |
| 廠商： | SIEMENS AG |
| 英文描述： | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合)) |
| 中文描述： | 100萬× 16高兆同步DRAM高速圖形應(yīng)用程序（1,600位（1米× 16）同步動態(tài)隨機(jī)存儲器（用于高速圖形場合）） |
| 文件頁數(shù)： | 15/19頁 |
| 文件大?。?/td> | 110K |
| 代理商： | HYB 39S16160CT-6 |
HYB 39S16160CT-5.5/-6/-7
16-MBit Synchronous DRAM
Data Book
15
09.99
AC Characteristics
1, 2
T
A
= 0 to 70
°
C;
V
SS
= 0 V;
V
DD
= 3.3 V
±
0.3 V,
t
T
= 1 ns
Parameter
Symb.
Limit Values
Unit
Note
-5.5
-6
-7
min.
max.
min.
max.
min.
max.
Clock and Clock Enable
Clock Cycle Time
CAS Latency = 3
CAS Latency = 2
t
CK
t
CK
5.5
7.5
–
–
6
8
–
–
7
9
–
–
ns
ns
–
Clock frequency
CAS Latency = 3
CAS Latency = 2
t
CK
t
CK
–
–
183
133
–
–
166
125
–
–
143
115
MHz
MHz
–
Access time from clock
CAS Latency = 3
CAS Latency = 2
t
AC
t
AC
t
CH
t
CL
t
T
–
–
4.5
5.4
–
–
5
6
–
–
5
6
ns
ns
2
3
Clock High Pulse Width
2
–
2
–
2.5
–
ns
–
Clock Low Pulse Width
2
–
2
–
2.5
–
ns
–
Transition Time
0.5
10
0.5
10
0.5
10
ns
–
Setup and Hold Times
Input Setup Time
t
IS
t
IH
t
CKS
t
CKH
t
RSC
t
SB
1.5
–
2
–
2
–
ns
4
Input Hold Time
1
–
1
–
1
–
ns
4
CKE Setup Time
1.5
–
2
–
2
–
ns
4
CKE Hold Time
1
–
1
–
1
–
ns
4
Mode Register Set-up Time
11
–
12
–
24
–
ns
–
Power Down Mode Entry
Time
0
5.5
0
6
0
7
ns
–
Common Parameters
Row to Column Delay Time
t
RCD
t
RP
t
RAS
t
RC
t
RRD
15
–
16
–
18
–
ns
5
Row Precharge Time
15
–
16
–
18
–
ns
5
Row Active Time
33
–
36
100k
42
100k
ns
5
Row Cycle Time
49.5
–
54
–
63
–
ns
5
Activate(a) to Activate(b)
Command Period
11
–
12
–
14
–
ns
–
CAS(a) to CAS(b) Command
Period
t
CCD
1
–
1
–
1
–
CLK
–
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB 39S16160CT-7 | 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動態(tài)RAM(用于高速圖形場合)) |
| HYB 39S256160T | 256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4列 × 4M位 × 16)同步動態(tài)RAM) |
| HYB 39S256400T | 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動態(tài)RAM) |
| HYB 39S256800T | 256-Mbit(4banks × 8MBit × 8) Synchronous DRAM(256M(4列 × 8M位 × 8)同步動態(tài)RAM) |
| HYB 39S256400AT | 256-Mbit(4banks × 16MBit × 4) Synchronous DRAM(256M(4列 × 16M位 × 4)同步動態(tài)RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB39S16160CT-6 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications |
| HYB39S16160CT-7 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16 MBit Synchronous DRAM for High Speed Graphics Applications |
| HYB39S16160CT-8 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16 MBit Synchronous DRAM |
| HYB39S16320TQ-10 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Special Mode Registers Two color registers Burst Read with Single Write Operation |
| HYB39S16320TQ-5.5 | 制造商:Siemens 功能描述:Electronic Component |
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