參數(shù)資料
型號(hào): HYB 39S16160CT-6
廠商: SIEMENS AG
英文描述: 1M × 16-Mbit Synchronous DRAM for High-Speed Graphics Applications(16M位(1M × 16)同步動(dòng)態(tài)RAM(用于高速圖形場(chǎng)合))
中文描述: 100萬(wàn)× 16高兆同步DRAM高速圖形應(yīng)用程序(1,600位(1米× 16)同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器(用于高速圖形場(chǎng)合))
文件頁(yè)數(shù): 13/19頁(yè)
文件大小: 110K
代理商: HYB 39S16160CT-6
HYB 39S16160CT-5.5/-6/-7
16-MBit Synchronous DRAM
Data Book
13
09.99
Operating Currents
T
A
= 0 to 70
°
C,
V
DD
= 3.3 V
±
0.3 V
(Recommended Operating Conditions unless otherwise noted)
Capacitance
T
A
= 0 to 70
°
C;
V
DD
= 3.3 V
±
0.3 V,
f
= 1 MHz
Parameter
Symbol
Values
Unit
min.
max.
Input Capacitance (CLK)
C
I1
C
I2
2.5
4.0
pF
Input Capacitance
(A0 - A12, BA0, BA1, RAS, CAS, WE, CS, CKE,
DQM, UDQM, LDQM)
2.5
5.0
pF
Input/Output Capacitance (DQ)
C
IO
4.0
6.5
pF
Parameter & Test
Condition
Symb. -5.5 -6
-7
Unit
Note
max.
Operating current
Burst Length = 4
t
RC
t
RC(MIN.)
,
t
CK
t
CK(MIN.)
,
I
O
= 0 mA
2 bank interleave operation
CKE
V
IL(MAX.)
t
CK
t
CK(MIN.)
CKE
V
IL(MAX.)
,
t
CK
= infinite
I
CC2PS
I
CC1
110 100 90
mA
1, 2
Precharge standby
Current in Power Down
Mode
I
CC2P
2
2
2
mA
2
1
1
1
mA
Precharge standby
Current in Non-Power
Down Mode
CKE
V
IH(MIN.)
t
CK
t
CK(MIN.)
,
input signals changed once
in 3 cycles
CKE
V
IH(MIN.)
,
t
CK
= infinite,
input signals are stable
CKE
V
IL(MAX.)
,
t
CK
=
t
CK(MIN.)
I
CC3P
CKE
V
IL(MAX.)
,
t
CK
= infinite,
input signals are stable
CKE
V
IH(MIN.)
,
t
CK
t
CK(MIN.)
changed once in 3 cycles
I
CC2N
15
15
15
mA
CS =
High
I
CC2NS
5
5
5
mA
Active standby
Current in Power Down
Mode
4
4
4
mA
I
CC3PS
4
4
4
mA
Active standby
Current in Non Power
Down Mode
I
CC3N
25
25
25
mA
CS=
High,
1
CKE
V
IH(MIN.)
,
t
CK
= infinite,
input signals are stable
I
CC3NS
15
15
15
mA
Burst Operating Current
Burst Length = full page
t
RC
= infinite
t
CK
t
CK(MIN.)
,
I
O
= 0 mA,
2 banks interleave
I
CC4
100 90
80
mA
1, 2
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