參數(shù)資料
型號(hào)： HYB 514100BJ-50
廠商： SIEMENS AG
英文描述： 4M × 1-Bit Dynamic RAM(4M × 1位動(dòng)態(tài)RAM)
中文描述： 4米× 1位動(dòng)態(tài)隨機(jī)存儲(chǔ)器（4米× 1位動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 4/21頁(yè)
文件大小： 108K
代理商： HYB 514100BJ-50
HYB 514100BJ-50/-60
4M
×
1 DRAM
Semiconductor Group
4
1998-10-01
Absolute Maximum Ratings
Operating temperature range ........................................................................................... 0 to 70
°
C
Storage temperature range.................................................................................... – 55 to + 150
°
C
Input/output voltage ....................................................................................................... – 1 to + 7 V
Power Supply voltage.................................................................................................... – 1 to + 7 V
Data out current (short circuit) ............................................................................................... 50 mA
Note: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage of the device. Exposure to absolute maximum rating conditions for extended
periods may affect device reliability.
DC Characteristics
T
A
= 0 to 70
°
C,
V
SS
= 0 V,
V
CC
= 5 10 %,
t
T
= 5 ns
Parameter
Symbol
Limit Values
Unit Test
Condition
min.
max.
V
CC
+ 0.5 V
0.8
Input high voltage
V
IH
V
IL
V
OH
V
OL
I
I(L)
2.4
1
Input low voltage
Output high voltage (
I
OUT
= – 5 mA)
Output low voltage (
I
OUT
= 4.2 mA)
Input leakage current, any input
(0 V <
V
IN
< 7, all other input = 0 V)
Output leakage current
(DO is disabled, 0 <
V
OUT
<
V
CC
)
Average
V
CC
supply current
– 1.0
V
1
2.4
–
V
1
–
0.4
V
μ
A
1
– 10
10
1
I
O(L)
– 10
10
μ
A
1
-50 version
-60 version
I
CC1
–
–
120
110
mA
mA
2, 3
Standby
V
CC
supply current
(RAS = CAS = WE =
V
IH
)
Average
V
CC
supply current during RAS-only
refresh cycles
I
CC2
–
2
mA
-50 version
-60 version
I
CC3
–
–
120
110
mA
mA
2
Average
V
CC
supply current during fast page
mode operation
-50 version
-60 version
I
CC4
–
–
80
70
mA
mA
2, 3
相關(guān)PDF資料
PDF描述
HYB514100BJ-50- 4M x 1-Bit Dynamic RAM
HYB514100BJ-60 4M x 1-Bit Dynamic RAM
HYB 514171BJ-50 256k × 16-Bit Dynamic RAM(256k × 16位 動(dòng)態(tài) RAM)
HYB514171BJ-50 256k x 16-Bit Dynamic RAM
HYB514171BJ-50- 256k x 16-Bit Dynamic RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB514100BJ-50 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM
HYB514100BJ-50- 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM
HYB514100BJ-60 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM
HYB514100BJ-80 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x1 Fast Page Mode DRAM
HYB514100BJL-50 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:x1 Fast Page Mode DRAM
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