參數(shù)資料
型號: HYB18T1G160AF-3S
廠商: INFINEON TECHNOLOGIES AG
英文描述: 1 Gbit DDR2 SDRAM
中文描述: 1千兆位DDR2內(nèi)存
文件頁數(shù): 48/89頁
文件大小: 1261K
代理商: HYB18T1G160AF-3S
Page 48 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
Examples:
Burst Read with Auto-Precharge followed by an activation to the Same Bank (tRC Limit)
RL = 5 (AL = 2, CL = 3), BL = 4, tRTP <= 2 clocks
Burst Read with Auto-Precharge followed by an Activation to the Same Bank (tRAS Limit):
RL = 5 (AL = 2, CL = 3), BL = 4, tRTP <= 2 clocks
NOP
NOP
NOP
NOP
Bank
Activate
NOP
READ w/AP
A10 ="high"
Posted CAS
T0
T2
T1
T3
T4
T5
T6
T7
T8
Dout A0
Dout A1
Dout A2
Dout A3
RL = 5
AL = 2
CL = 3
NOP
CMD
DQ
BR-AP5231
tRP
Auto-Precharge Begins
DQS,
DQS
tRAS
tRCmin.
NOP
AL + BL/2
CK, CK
NOP
NOP
NOP
NOP
Bank
Activate
NOP
READ w/AP
A10 ="high"
Posted CAS
T0
T2
T1
T3
T4
T5
T6
T7
T8
Dout A0
Dout A1
Dout A2
Dout A3
RL = 5
AL = 2
CL = 3
NOP
CMD
DQ
BR-AP5232
tRP
Auto-Precharge Begins
DQS,
DQS
tRC
tRAS(min)
NOP
CK, CK
相關(guān)PDF資料
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HYB18T1G160AF-5 1 Gbit DDR2 SDRAM
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