參數(shù)資料
型號(hào)： HYB18T1G400AF-37
廠商： INFINEON TECHNOLOGIES AG
英文描述： 1 Gbit DDR2 SDRAM
中文描述： 1千兆位DDR2內(nèi)存
文件頁數(shù)： 46/89頁
文件大?。?/td> 1261K
代理商： HYB18T1G400AF-37
Page 46 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
2.7.2 Burst Write followed by Precharge
Minimum Write to Precharge command spacing to the same bank =
WL + BL/2 + tWR
. For write cycles, a delay
must be satisfied from the completion of the last burst write cycle until the Precharge command can be issued.
This delay is known as a write recovery time (tWR) referenced from the completion of the burst write to the Pre-
charge command. No Precharge command should be issued prior to the tWR delay, as DDR2 SDRAM does not
support any burst interrupt by a Precharge command. tWR is an analog timing parameter (see the AC table in this
datasheet) and is not the programmed value for tWR in the MRS.
Examples:
.
Burst Write followed by Precharge: WL = (RL - 1) = 3, BL = 4, tWR = 3
Burst Write followed by Precharge: WL = (RL - 1) = 4, BL = 4, tWR = 3
NOP
NOP
NOP
NOP
NOP
W RITE A
Post CAS
T0
T2
T1
T3
T4
T5
T6
T7
T8
WL = 3
BW-P3
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
tW R
Completion of
the Burst Write
Precharge
A
NOP
DQS,
DQS
CK, CK
NOP
NOP
NOP
NOP
NOP
W RITE A
Post CAS
T0
T2
T1
T3
T4
T5
T6
T7
T9
WL = 4
BW-P4
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
tW R
Completion of
the Burst Write
Precharge
A
NOP
DQS,
DQS
CK, CK
相關(guān)PDF資料
PDF描述
HYB18T1G400AF-3S 1 Gbit DDR2 SDRAM
HYB18T1G400AF-5 1 Gbit DDR2 SDRAM
HYB18T1G800AF 1 Gbit DDR2 SDRAM
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HYB18T1G160AFL-3 1 Gbit DDR2 SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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HYB18T1G800BF-3S 功能描述:IC DDR2 SDRAM 1GBIT 68TFBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:60 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:16K (2K x 8) 速度:2MHz 接口:SPI 3 線串行 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-DIP（0.300"，7.62mm） 供應(yīng)商設(shè)備封裝:8-PDIP 包裝:管件 產(chǎn)品目錄頁面:1449 (CN2011-ZH PDF)
HYB18T256400AF-3.7 制造商:Infineon Technologies AG 功能描述:64M X 4 DDR DRAM, 0.5 ns, PBGA60
HYB18T256400AF-5 制造商:Infineon Technologies AG 功能描述:SDRAM, DDR, 64M x 4, 60 Pin, Plastic, BGA
HYB18T256800AF-5 制造商:Infineon Technologies AG 功能描述:
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