參數(shù)資料
型號(hào): HYB18T1G400AF-37
廠商: INFINEON TECHNOLOGIES AG
英文描述: 1 Gbit DDR2 SDRAM
中文描述: 1千兆位DDR2內(nèi)存
文件頁(yè)數(shù): 69/89頁(yè)
文件大?。?/td> 1261K
代理商: HYB18T1G400AF-37
HYB18T1G400/800/160AF
1Gb DDR2 SDRAM
INFINEON Technologies
Page 69 Rev. 1.02 May 2004
5.4.2 Full Strength Default Pull-down Driver Characteristics
Pull-down Driver Current [mA]
Nominal Default low
Voltage (V)
Minimum
Nominal Default high
Maximum
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
8.5
12.1
14.7
16.4
17.8
18.6
19.0
19.3
19.7
19.9
20.0
20.1
20.2
20.3
20.4
20.6
11.3
16.5
21.2
25.0
28.3
30.9
33.0
34.5
35.5
36.1
36.6
36.9
37.1
37.4
37.6
37.7
37.9
11.8
16.8
22.1
27.6
32.4
36.9
40.9
44.6
47.7
50.4
52.6
54.2
55.9
57.1
58.4
59.6
60.9
15.9
23.8
31.8
39.7
47.7
55.0
62.3
69.4
75.3
80.5
84.6
87.7
90.8
92.9
94.9
97.0
99.1
101.1
The driver characteristics evaluation conditions are:
Nominal Default 25
o
C (Tcase), VDDQ = 1.8 V, typical process
Minimum 95
o
C (Tcase), VDDQ = 1.7V, slow-slow process
Maximum 0
o
C (Tcase). VDDQ = 1.9 V, fast-fast process
0
20
40
60
80
100
120
0
0,2
0,4
0,6
0,8
1
1,2
1,4
1,6
1,8
2
VOUT to VSSQ (V)
P
Minimum
Nominal Default Low
Nominal Default High
Maximum
相關(guān)PDF資料
PDF描述
HYB18T1G400AF-3S 1 Gbit DDR2 SDRAM
HYB18T1G400AF-5 1 Gbit DDR2 SDRAM
HYB18T1G800AF 1 Gbit DDR2 SDRAM
HYB18T1G400AFL-3 1 Gbit DDR2 SDRAM
HYB18T1G160AFL-3 1 Gbit DDR2 SDRAM
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