參數(shù)資料
型號(hào): HYB18T256160AF
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256 Mbi t DDR2 SDRAM
中文描述: 256姆噸DDR2內(nèi)存
文件頁(yè)數(shù): 38/90頁(yè)
文件大小: 1246K
代理商: HYB18T256160AF
Page 38 Rev. 1.02 May 2004
INFINEON Technologies
HYB18T256400/800/160AF
256Mb DDR2 SDRAM
The seamless burst write operation is supported by enabling a write command every BL / 2 number of clocks. This
operation is allowed regardless of same or different banks as long as the banks are activated.
The seamless, non interrupting 8-bit burst write operation is supported by enabling a write command at every BL /
2 number of clocks. This operation is allowed regardless of same or different banks as long as the banks are acti-
vated.
Seamless Burst Write Operation: RL = 5, WL = 4, BL = 4
Seamless Burst Write Operation: RL = 3, WL = 2, BL = 8, non interrupting
NOP
NOP
NOP
NOP
NOP
NOP
NOP
DIN A0 DIN A1 DIN A2 DIN A3
W RITE A
Post CAS
W L = RL - 1 = 4
W RITE B
Post CAS
DIN B0 DIN B1 DIN B2 DIN B3
T0
T2
T1
T3
T4
T5
T6
T7
T8
CMD
DQ
SBR
DQS,
DQS
CK, CK
NOP
NOP
NOP
NOP
NOP
NOP
NOP
W RITE A
W L = RL - 1 = 2
T0
T2
T1
T3
T4
T5
T6
T7
T8
CMD
DQ
SBW_BL8
DQS,
DQS
W RITE B
DIN A0 DIN A1 DIN A2 DIN A3 DIN A4 DIN A5 DIN A5 DIN A7
DIN B0 DIN B1 DIN B2 DIN B3 DIN B4 DIN B5 DIN
CK, CK
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
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