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參數(shù)資料
| 型號： | HYB3118165BSJ-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 |
| 中文描述： | 1M X 16 EDO DRAM, 60 ns, PDSO42 |
| 封裝： | 0.400 INCH, PLASTIC, SOJ-42 |
| 文件頁數(shù)： | 9/24頁 |
| 文件大?。?/td> | 192K |
| 代理商： | HYB3118165BSJ-60 |
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M
×
16 EDO-DRAM
Semiconductor Group
9
1998-10-01
Access time from CAS precharge
t
CPA
t
COH
t
RAS
t
RHCP
t
OES
–
27
–
32
ns
7
Output data hold time
5
–
5
–
ns
RAS pulse width in EDO mode
50
200k 60
200k ns
CAS precharge to RAS delay
27
–
32
–
ns
OE setup time prior to CAS
5
–
5
–
5
–
Hyper Page Mode (EDO) Read-Modify-Write Cycle
Hyper page mode (EDO) read-write cycle time
t
PRWC
CAS precharge to WE
58
–
68
–
ns
t
CPWD
41
–
49
–
ns
CAS-before-RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
10
–
10
–
ns
CAS hold time
10
–
10
–
ns
RAS to CAS precharge time
5
–
5
–
ns
Write to RAS precharge time
10
–
10
–
ns
Write hold time referenced to RAS
10
–
10
–
ns
CAS-before-RAS Counter Test Cycle
CAS precharge time (CAS-before-RAS
counter test cycle)
t
CPT
35
–
40
–
ns
AC Characteristics
(cont’d)
5, 6
T
A
= 0 to 70
°
C,
V
CC
= 5 V
±
10 % /
V
CC
= 3.3 V
±
0.3 V,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
-50
-60
min.
max. min.
max.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3118165BST-50 | High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85 |
| HYB3118165BST-60 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
| HYB 3118165BSJ | 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動態(tài) RAM) |
| HYB 3118165BST-50 | 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動態(tài) RAM) |
| HYB 3118165BST-60 | 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動態(tài) RAM) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3118165BST-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB3118165BST-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:1M x 16-Bit Dynamic RAM 1k Refresh |
| HYB314100BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
| HYB314100BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
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