參數(shù)資料
型號(hào): HYB3118165BSJ-60
廠(chǎng)商: SIEMENS A G
元件分類(lèi): DRAM
英文描述: High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85
中文描述: 1M X 16 EDO DRAM, 60 ns, PDSO42
封裝: 0.400 INCH, PLASTIC, SOJ-42
文件頁(yè)數(shù): 20/24頁(yè)
文件大?。?/td> 192K
代理商: HYB3118165BSJ-60
HYB 5118165BSJ/BST-50/-60
HYB 3118165BSJ/BST-50/-60
1M
×
16 EDO-DRAM
Semiconductor Group
20
1998-10-01
Hidden Refresh Cycle (Read)
SPT03053
"H" or "L"
V
I/O
(Outputs)
OL
V
(Inputs)
I/O
OH
V
V
IL
IH
V
OE
WE
V
IL
IH
V
IL
IH
V
CLZ
RAC
t
t
DZO
t
t
DZC
t
CAC
OEA
AA
t
t
Address
V
IL
IH
V
LCAS
UCAS
RAS
V
IL
IH
V
IL
V
IH
V
Column
RAS
t
t
RAH
Row
ASR
t
t
RCS
ASC
t
t
RCD
RAD
t
CAH
t
RRH
t
WRP
t
t
RSH
t
RC
RP
t
Valid Data OUT
OEZ
t
OFF
t
ODD
t
Hi Z
t
CDD
Row
WRH
t
t
CHR
RAS
t
ASR
t
CRP
t
RC
t
t
RP
相關(guān)PDF資料
PDF描述
HYB3118165BST-50 High-Speed Fully-Differential Amplifiers 8-MSOP -40 to 85
HYB3118165BST-60 High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85
HYB 3118165BSJ 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM)
HYB 3118165BST-50 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM)
HYB 3118165BST-60 1M×16-Bit Dynamic RAM (Hyper Page Mode-EDO)(1M×16位 動(dòng)態(tài) RAM)
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