參數(shù)資料
型號: HYB314100BJL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
中文描述: 4M X 1 FAST PAGE DRAM, 60 ns, PDSO20
封裝: 0.300 INCH, PLASTIC, SOJ-20
文件頁數(shù): 11/23頁
文件大?。?/td> 1153K
代理商: HYB314100BJL-60
Semiconductor Group
11
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Read Cycle
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相關代理商/技術參數(shù)
參數(shù)描述
HYB314100BJL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314171BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh