型號: | HYB314100BJL-60 |
廠商: | SIEMENS A G |
元件分類: | DRAM |
英文描述: | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
中文描述: | 4M X 1 FAST PAGE DRAM, 60 ns, PDSO20 |
封裝: | 0.300 INCH, PLASTIC, SOJ-20 |
文件頁數: | 5/23頁 |
文件大?。?/td> | 1153K |
代理商: | HYB314100BJL-60 |
相關PDF資料 |
PDF描述 |
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HYB314100BJL-70 | 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
HYB 314175BJ-50 | 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16位 外延式數據輸出(EDO)動態(tài)RAM) |
HYB314175BJ-50- | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
HYB314175BJ-55 | High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 |
HYB314175BJ-60 | Transistor Array IC; Package/Case:16-DIP; Mounting Type:Through Hole |
相關代理商/技術參數 |
參數描述 |
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HYB314100BJL-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM |
HYB314171BJ-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
HYB314171BJ-50- | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
HYB314171BJ-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |
HYB314171BJ-70 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh |