參數(shù)資料
型號(hào): HYB314100BJL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
中文描述: 4M X 1 FAST PAGE DRAM, 60 ns, PDSO20
封裝: 0.300 INCH, PLASTIC, SOJ-20
文件頁(yè)數(shù): 3/23頁(yè)
文件大?。?/td> 1153K
代理商: HYB314100BJL-60
Semiconductor Group
3
HYB 314100BJ/BJL-50/-60/-70
3.3V 4M x 1 DRAM
Pin Configuration
(top view)
Pin Names
A0-A10
Address Input
RAS
Row Address Strobe
CAS
Column Address Strobe
WE
Read/Write Input
DI
Data In
DO
V
CC
V
SS
N.C.
Data Out
Power Supply (+ 3.3 V)
Ground (0 V)
No Connection
P-SOJ-26/20-5
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PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
HYB314100BJL-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 1-Bit Dynamic RAM Low Power 4M x 1-Bit Dynamic RAM
HYB314171BJ-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-50- 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh
HYB314171BJ-70 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh