參數(shù)資料
型號(hào): HYB3165165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 12/29頁
文件大?。?/td> 284K
代理商: HYB3165165BTL-60
Semiconductor Group
12
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
RAS pulse width in hyper page mode
t
RAS
CAS precharge to RAS Delay
40
200k
50
200k
60
200k
ns
t
RHPC
t
OEP
t
OEHC
22
27
32
ns
OE pulse width
5
5
5
ns
OE hold time from CAS high
5
5
5
ns
Output buffer turn-off delay from WE
t
WEZ
OE setup time prior to CAS
0
10
0
13
0
15
ns
t
OES
5
5
5
ns
Hyper Page Mode (EDO) Read-
modify-Write Cycle
Hyper page mode (EDO) read-write
cycle time
t
PRWC
44
54
63
ns
CAS precharge to WE
t
CPWD
34
42
49
ns
CAS before RAS Refresh Cycle
CAS setup time
t
CSR
t
CHR
t
RPC
t
WRP
t
WRH
5
5
5
ns
CAS hold time
5
5
10
ns
RAS to CAS precharge time
5
5
5
ns
Write to RAS precharge time
Write hold time referenced to RAS
5
5
5
5
10
10
ns
ns
Self Refresh Cycle (L-versions only)
RAS pulse width
t
RASS
t
RPS
t
CHS
100k
100k
_
100
k
_
ns
17
RAS precharge time
69
84
104
ns
17
CAS hold time
-50
-50
-50
ns
17
AC Characteristics
(cont’d)
5)6)
AC64-2E
T
A
= 0 to 70 °C,
V
CC
= 3.3 V
±
0.3V ,
t
T
= 2 ns
Parameter
Symbol
Limit Values
Unit
Note
- 40
- 50
- 60
min.
max.
min.
max.
min.
max.
相關(guān)PDF資料
PDF描述
HYB3166165BTL-60 4M x 16-Bit Dynamic RAM
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
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HYB3165165T-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
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HYB3165165TL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
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