參數(shù)資料
型號: HYB3165165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 6/29頁
文件大小: 284K
代理商: HYB3165165BTL-60
Semiconductor Group
6
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Block Diagram for HYB 3165165AT(L)
No. 2 Clock
Generator
Column
Address
Buffer(10)
Refresh
Controller
Refresh
Counter (12)
Address
Buffers(12)
Row
No. 1 Clock
Generator
&
Data in
Buffer
Data out
Buffer
Column
Decoder
Sense Amplifier
I/O Gating
Memory Array
4096x1024x16
Row
Decoder
A0
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
A11
WE
UCAS
LCAS
.
4096
1024
x16
.
RAS
10
12
16
I/O1
I
/O2
OE
12
12
16
16
10
I
/O16
相關(guān)PDF資料
PDF描述
HYB3166165BTL-60 4M x 16-Bit Dynamic RAM
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
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