參數(shù)資料
型號: HYB3165165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 20/29頁
文件大?。?/td> 284K
代理商: HYB3165165BTL-60
Semiconductor Group
20
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Hyper Page Mode (EDO) Read Cycle (WE Control)
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t
RAC
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AAAA
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AA
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A
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A
A
A
AAA
AAA
AAA
AAA
AAA
AAA
t
RP
t
RSH
t
CAS
t
CAS
t
CP
t
CRP
t
RAL
t
CAH
t
CAH
t
ASC
t
CSH
t
CAS
t
RCD
t
RAH
t
ASR
Column 2
Row
Data Out
1
RAS
I/O
(Output)
WE
Address
UCAS
LCAS
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
“H” or “L”
VOH
VOL
OE
t
RAS
t
CRP
t
ASC
t
HPC
t
CAH
t
RAD
t
RHCP
t
ASC
t
RCS
t
RRH
t
RCH
t
AA
t
CAC
t
CLZ
t
OEA
t
OES
t
WEZ
t
CAC
t
AA
t
CPA
Data Out
Column N
Column 1
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
AAAA
Data Out
N
t
OEZ
t
OFF
t
CAC
t
AA
t
CPA
2
t
RCH
t
RCS
t
WPZ
t
RCH
t
RCS
t
WPZ
t
WEZ
WL7
相關PDF資料
PDF描述
HYB3166165BTL-60 4M x 16-Bit Dynamic RAM
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HYB3164165TL-60 4M x 16-Bit Dynamic RAM
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