- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄370788 > HYB3165165BTL-60 (SIEMENS A G) 4M x 16-Bit Dynamic RAM PDF資料下載
參數(shù)資料
| 型號(hào)： | HYB3165165BTL-60 |
| 廠商： | SIEMENS A G |
| 元件分類： | DRAM |
| 英文描述： | 4M x 16-Bit Dynamic RAM |
| 中文描述： | 4M X 16 EDO DRAM, 60 ns, PDSO50 |
| 封裝： | 0.400 INCH, PLASTIC, TSOP2-50 |
| 文件頁(yè)數(shù)： | 2/29頁(yè) |
| 文件大?。?/td> | 284K |
| 代理商： | HYB3165165BTL-60 |
第1頁(yè)當(dāng)前第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)
Semiconductor Group
2
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
This device is a 64 MBit dynamic RAM organized 4 194 304 x 16 bits. The device is fabricated on
an advanced first generation 64Mbit 0,35
μ
m CMOS silicon gate process technology. The circuit
and process design allow this device to achieve high performance and low power dissipation. The
HYB3164(5)165AT operates with a single 3.3 +/-0.3V power supply and interfaces with either
LVTTL or LVCMOS levels. Multiplexed address inputs permit the HYB3164(5/6)165AT to be
packaged in 400mil wide TSOPII-50 package. These packages provide high system bit densities
and are compatible with commonly used automatic testing and insertion equipment. The
HYB3164(5/6)165ATL parts have a very low power sleep mode“ supported by Self Refresh.
Ordering Information
Type
Ordering
Code
Package
Descriptions
8k-refresh versions:
HYB 3164165AT-40
P-TSOPII-50 400 mil
EDO-DRAM (access time 40 ns)
HYB 3164165AT-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3164165AT-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
HYB 3164165ATL-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3164165ATL-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
4k-refresh versions:
HYB 3165165AT-40
P-TSOPII-50 400 mil
EDO-DRAM (access time 40 ns)
HYB 3165165AT-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3165165AT-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
HYB 3165165ATL-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3165165ATL-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
2k-refresh versions:
HYB 3166165AT-40
P-TSOPII-50 400 mil
EDO-DRAM (access time 40 ns)
HYB 3166165AT-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3166165AT-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
HYB 3166165ATL-50
P-TSOPII-50 400 mil
EDO-DRAM (access time 50 ns)
HYB 3166165ATL-60
P-TSOPII-50 400 mil
EDO-DRAM (access time 60 ns)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| HYB3166165BTL-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165TL-50 | 4M x 16-Bit Dynamic RAM |
| HYB3164165TL-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165T-60 | 4M x 16-Bit Dynamic RAM |
| HYB3164165T | High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| HYB3165165T-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165T-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165TL-50 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165165TL-60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM |
| HYB3165400AJ-40 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。