參數(shù)資料
型號: HYB3165165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 21/29頁
文件大?。?/td> 284K
代理商: HYB3165165BTL-60
Semiconductor Group
21
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Hyper Page Mode (EDO) Early Write Cycle
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WCS
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WCH
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ASR
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DH
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Column 1
Column 2
Row
Addr
Data In N
Data In 2
Data In 1
Column N
RAS
I/O (Input)
WE
Address
UCAS
LCAS
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
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“H” or “L”
VOH
VOL
OE
t
RAS
t
CRP
t
ASC
t
CWL
t
WCS
t
WP
t
WCH
t
CWL
t
WCS
t
WP
t
WCH
t
RWL
t
DH
t
DS
t
HPC
t
CAH
t
RAD
t
RHCP
t
ASC
WL8
相關(guān)PDF資料
PDF描述
HYB3166165BTL-60 4M x 16-Bit Dynamic RAM
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
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