參數(shù)資料
型號: HYB3165165BTL-60
廠商: SIEMENS A G
元件分類: DRAM
英文描述: 4M x 16-Bit Dynamic RAM
中文描述: 4M X 16 EDO DRAM, 60 ns, PDSO50
封裝: 0.400 INCH, PLASTIC, TSOP2-50
文件頁數(shù): 15/29頁
文件大?。?/td> 284K
代理商: HYB3165165BTL-60
Semiconductor Group
15
HYB3164(5/6)165AT(L)-40/-50/-60
4M x 16 EDO-DRAM
Write Cycle (Early Write)
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RAS
UCAS
LCAS
Address
WE
OE
I/O
(Inputs)
I/O
(Outputs)
VIH
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VOH
VOL
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Valid Data In
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Hi Z
Column
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Row
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“H” or “L”
WL2
相關PDF資料
PDF描述
HYB3166165BTL-60 4M x 16-Bit Dynamic RAM
HYB3164165TL-50 4M x 16-Bit Dynamic RAM
HYB3164165TL-60 4M x 16-Bit Dynamic RAM
HYB3164165T-60 4M x 16-Bit Dynamic RAM
HYB3164165T High-Speed Fully-Differential Amplifiers 8-MSOP 0 to 70
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HYB3165165T-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
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HYB3165165TL-50 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3165165TL-60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:4M x 16-Bit Dynamic RAM
HYB3165400AJ-40 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:16M x 4-Bit Dynamic RAM