參數(shù)資料
型號(hào)： IRF7341
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁數(shù)： 2/7頁
文件大?。?/td> 134K
代理商： IRF7341
IRF7341
2
www.irf.com
Parameter
Min. Typ. Max. Units
55
–––
––– 0.059 –––
––– 0.043 0.050
––– 0.056 0.065
1.0
–––
7.9
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
24
–––
2.3
–––
7.0
–––
8.3
–––
3.2
–––
32
–––
13
–––
740
–––
190
–––
71
Conditions
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 4.7A
V
GS
= 4.5V, I
D
= 3.8A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 10V, I
D
= 4.5A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 55°C
V
GS
= -20V
V
GS
= 20V
I
D
= 4.5A
V
DS
= 44V
V
GS
= 10V, See Fig. 10
V
DD
= 28V
I
D
= 1.0A
R
G
= 6.0
R
D
= 16
,
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 9
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
2.0
25
-100
100
36
3.4
10
12
4.8
48
20
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
nC
pF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
GSS
μA
R
DS(on)
Static Drain-to-Source On-Resistance
I
DSS
Drain-to-Source Leakage Current
nA
ns
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.0A
di/dt = -100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
60
120
1.2
90
170
V
ns
nC
Source-Drain Ratings and Characteristics
–––
–––
–––
–––
38
2.0
A
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
4.7A, di/dt
≤
220A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Notes:
Starting T
J
= 25°C, L = 6.5mH
R
G
= 25
, I
AS
= 4.7A. (See Figure 8)
When mounted on 1 inch square copper board, t<10 sec
S
D
G
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