參數(shù)資料
型號: IRF7341
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁數(shù): 3/7頁
文件大?。?/td> 134K
代理商: IRF7341
IRF7341
www.irf.com
3
1
10
100
3
4
5
6
VDS
20μs PULSE WIDTH
V , Gate-to-Source Voltage (V)
I
D
T = 25 C
T = 150 C
Fig 3.
Typical Transfer Characteristics
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
Fig 4.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 25 C
TOP
BOTTOM
VGS
V , Drain-to-Source Voltage (V)
I
D
3.0V
1
10
100
0.1
1
10
100
20μs PULSE WIDTH
T = 150 C
TOP
BOTTOM
VGS
6.0V
V , Drain-to-Source Voltage (V)
I
D
3.0V
4.5V
4.5V
0.1
1
10
100
0.2
0.5
0.8
1.1
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 150 C
T = 25 C
°
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