參數(shù)資料
型號(hào)： IRF7350PBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù)： 2/16頁(yè)
文件大小： 320K
代理商： IRF7350PBF
IRF7350PbF
2
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width
≤
400μs; duty cycle
≤
Surface mounted on 1 in square Cu board
N channel: Starting T
J
= 25°C, L = 4.0mH, R
G
= 25
,
I
AS
= 4.2A
P channel: Starting T
J
= 25°C, L = 11mH, R
G
= 25
,
I
AS
= -3.0A
Parameter
Min. Typ. Max. Units
N-Ch 100
—
P-Ch -100
—
N-Ch
—
0.12
P-Ch
—
-0.11
—
—
Conditions
—
—
—
—
V
GS
= 0V, I
D
= 250μA
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= 1mA
Reference to 25°C, I
D
= -1mA
V
GS
= 10V, I
D
= 2.1A
N-Ch 2.0
P-Ch -2.0
N-Ch 2.4
P-Ch 1.1
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
—
—
19
21
3.0
3.4
8.8
10
6.7
25
11
13
35
30
20
40
380
360
100
110
54
65
4.0
-4.0
—
—
25
-25
250
-250
±100
28
31
4.5
5.1
13
16
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
DS
= V
GS
, I
D
= 250μA
V
DS
= V
, I
D
= -250μA
V
DS
= 50V, I
D
= 2.1A
V
DS
= -50V, I
D
= -1.5A
V
DS
= 100V, V
GS
= 0V
V
DS
= -100V, V
GS
= 0V
V
DS
= 80 V, V
GS
= 0V, T
J
= 70°C
V
DS
= -80V, V
GS
= 0V, T
J
= 70°C
V
GS
= ± 20V
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
I
GSS
Q
g
Gate-to-Source Forward Leakage
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(ON)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
I
DSS
Drain-to-Source Leakage Current
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
N-Channel
I
D
= 2.1A, V
DS
= 80V, V
GS
= 10V
P-Channel
I
D
= -1.5A, V
DS
= -80V, V
GS
= -10V
N-Channel
V
DD
= 50V, I
D
= 1.0A, R
G
= 22
,
R
D
= 50
,
V
GS
= 10V
P-Channel
V
DD
= -50V, I
D
= -1.0A, R
G
= 22
R
D
= 50
,
V
GS
= -10V
P-Channel
V
GS
= 0V, V
DS
= -25V, = 1.0MHz
P-Ch
Parameter
Min. Typ. Max. Units
—
—
—
—
—
—
—
—
—
—
—
—
—
72
—
77
—
205
—
240
Conditions
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
1.8
-1.4
8.4
-6.0
1.3
-1.6
110
120
310
360
T
J
= 25°C, I
S
= 1.8A, V
GS
= 0V
T
J
= 25°C, I
S
= -1.4A, V
GS
= 0V
N-Channel
T
= 25°C, I
F
= 1.8A, di/dt = 100A/μs
P-Channel
T
J
= 25°C, I
F
= -1.4A, di/dt = -100A/μs
I
S
Continuous Source Current (Body Diode)
I
SM
Pulsed Source Current (Body Diode)
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Q
rr
Reverse Recovery Charge
N-Ch
0.21
—
—
0.48
V
GS
= -10V, I
D
= -1.5A
N-Channel
V
GS
= 0V, V
DS
= 25V, = 1.0MHz
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