參數(shù)資料
型號(hào): IRF7350PBF
廠商: International Rectifier
英文描述: HEXFET㈢ Power MOSFET
中文描述: ㈢的HEXFET功率MOSFET
文件頁(yè)數(shù): 7/16頁(yè)
文件大小: 320K
代理商: IRF7350PBF
IRF7350PbF
www.irf.com
7
Q
G
Q
GS
Q
GD
V
G
Charge
D.U.T.
V
DS
I
D
I
G
3mA
V
GS
.3
μ
F
50K
.2
μ
F
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
Fig 17.
Gate Charge Test Circuit
Fig 18.
Basic Gate Charge Waveform
Fig 16a.
Maximum Avalanche Energy
Vs. Drain Current
Fig 16d.
Unclamped Inductive Waveforms
Fig 16c.
Unclamped Inductive Test Circuit
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
A
15V
20V
25
50
75
100
125
150
0
20
40
60
80
100
Starting T , Junction Temperature
( C)
E
A
ID
TOP
BOTTOM
1.9A
3.4A
4.2A
相關(guān)PDF資料
PDF描述
IRF7353D2PBF MOSFET / Schottky Diode (VDSS = 30V , RDS(on) = 0.029ヘ , Schottky VF = 0.52V)
IRF7389 HEXFET Power MOSFET
IRF7401PBF HEXFET㈢ Power MOSFET
IRF7402PBF HEXFET㈢ Power MOSFET
IRF7404QPBF HEXFET Power MOSFET ( VDSS = -20V , RDS(on) = 0.040ヘ )
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7350PBF 制造商:International Rectifier 功能描述:MOSFET TRANSISTOR POWER DISSIPATION:2W
IRF7350TRHR 制造商:International Rectifier 功能描述:Trans MOSFET N/P-CH 100V 2.1A/1.5A 8-Pin SOIC T/R
IRF7350TRPBF 功能描述:MOSFET MOSFT DUAL N/PCh 100V 2.1A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7351PBF 功能描述:MOSFET 60V DUAL N-CH HEXFET 17.8mOhm 24nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF7351PBF 制造商:International Rectifier 功能描述:N CHANNEL MOSFET 60V 8A SOIC 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 60V, 8A, SOIC