參數(shù)資料
型號： IRF7416
廠商： International Rectifier
英文描述： P-Channel HEXFET Power MOSFET(P溝道 HEXFET 功率MOS場效應(yīng)管)
中文描述： P溝道HEXFET功率MOSFET的性（P溝道的HEXFET功率馬鞍山場效應(yīng)管）
文件頁數(shù)： 2/9頁
文件大小： 116K
代理商： IRF7416
IRF7416
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -5.6A, V
GS
= 0V
T
J
= 25°C, I
F
= -5.6A
di/dt = 100A/μs
I
SM
V
SD
t
rr
Q
rr
–––
–––
–––
–––
56
99
-1.0
85
150
V
ns
nC
Source-Drain Ratings and Characteristics
A
–––
–––
-45
–––
–––
-3.1
Parameter
Min. Typ. Max. Units
-30
–––
––– -0.024 –––
–––
––– 0.020
–––
––– 0.035
-1.0
–––
5.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
61
–––
8.0
–––
22
–––
18
–––
49
–––
59
–––
60
––– 1700 –––
–––
890
–––
410
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -5.6A
V
GS
= -4.5V, I
D
= -2.8A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -10V, I
D
= -2.8A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
V
GS
= 20V
I
D
= -5.6A
V
DS
= -24V
V
GS
= -10V, See Fig. 6 and 9
V
DD
= -15V
I
D
= -5.6A
R
G
= 6.2
R
D
= 2.7
,
See Fig. 10
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
GS(th)
g
fs
Gate Threshold Voltage
Forward Transconductance
–––
–––
-1.0
-25
-100
100
92
12
32
–––
–––
–––
–––
V
S
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
nC
–––
–––
pF
μA
nA
ns
I
I
DSS
Drain-to-Source Leakage Current
R
DS(on)
Static Drain-to-Source On-Resistance
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
-5.6A, di/dt
≤
100A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Pulse width
≤
300μs; duty cycle
≤
2%.
Starting T
J
= 25°C, L = 25mH
R
G
= 25
, I
AS
= -5.6A. (See Figure 12)
Surface mounted on FR-4 board, t
≤
10sec.
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