型號: | IRF7416 |
廠商: | International Rectifier |
英文描述: | P-Channel HEXFET Power MOSFET(P溝道 HEXFET 功率MOS場效應管) |
中文描述: | P溝道HEXFET功率MOSFET的性(P溝道的HEXFET功率馬鞍山場效應管) |
文件頁數(shù): | 9/9頁 |
文件大?。?/td> | 116K |
代理商: | IRF7416 |
相關PDF資料 |
PDF描述 |
---|---|
IRF7422D2PBF | FETKY⑩MOSFET &Schottky Diode |
IRF7422D2 | Co-packaged HEXFET Power MOSFET and Schottky Diode(同封裝 HEXFET晶體管和肖特基二極管) |
IRF7424PBF | HEXFET Power MOSFET |
irf7424 | Ultra Low On-Resistance |
IRF7457PBF | General-Purpose Power-Supply Monitor and Sequence Controller; 48-TQFP; with ADC Present |
相關代理商/技術參數(shù) |
參數(shù)描述 |
---|---|
IRF7416GTRPBF | 功能描述:MOSFET MOSFT PCh -30V -10A 20mOhm 61nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IRF7416PBF | 功能描述:MOSFET 1 P-CH -30V HEXFET 20mOhms 61nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IRF7416PBF | 制造商:International Rectifier 功能描述:MOSFET P -30V -10A SO-8 制造商:International Rectifier 功能描述:MOSFET, P, -30V, -10A, SO-8 制造商:International Rectifier 功能描述:MOSFET, P, -30V, -10A, SO-8, Transistor Polarity:P Channel, Continuous Drain Cur 制造商:International Rectifier 功能描述:MOSFET, P, -30V, -10A, SO-8, Transistor Polarity:P Channel, Continuous Drain Current Id:-10A, Drain Source Voltage Vds:-30V, On Resistance Rds(on):20mohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:-1V, Power Dissipation , RoHS Compliant: Yes |
IRF7416QPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IRF7416QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |