參數(shù)資料
型號(hào)： IS43R16160A
廠商： Integrated Silicon Solution, Inc.
英文描述： 16Meg x 16 256-MBIT DDR SDRAM
中文描述： 16Meg × 16 256兆位DDR SDRAM的
文件頁(yè)數(shù)： 24/56頁(yè)
文件大?。?/td> 792K
代理商： IS43R16160A
24
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
ISSI
IS43R16160A
Command
CKEn-1
CKEn
CS
RAS
CAS
WE
ADDR
A10/
AP
BA
Note
H
X
L
L
L
L
OP code
1,2
H
X
L
L
L
L
1,2
Device Deselect
H
X
H
X
X
X
X
1
No
L
H
H
H
Bank Active
H
X
L
L
H
H
RA
V
1
Read
H
X
L
H
L
H
CA
L
V
1
Read with Autoprecharge
H
1,3
Write
H
X
L
H
L
L
CA
L
V
1
Write with Autoprecharge
H
1,4
Precharge All Banks
H
X
L
L
H
L
X
H
X
1,5
Precharge selected Bank
L
V
1
Read Burst Stop
H
X
L
H
H
L
X
1
Auto
H
H
L
L
L
H
X
1
Self Refresh
Entry
H
L
L
L
L
H
X
1
Exit
L
H
H
X
X
X
1
L
H
H
H
Precharge Power
Down Mode
Entry
H
L
H
X
X
X
X
1
L
H
H
H
1
Exit
L
H
H
X
X
X
1
L
H
H
H
1
Active Power
Down Mode
Entry
H
L
H
X
X
X
X
1
L
V
V
V
1
Exit
L
H
X
1
Note :
1. LDM/UDM states are Don’t Care. Refer to below Write Mask Truth Table.
2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS.
Before entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP
period from Prechagre command.
3. If a Read with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+tRP).
4. If a Write with Autoprecharge command is detected by memory component in CK(n), then there will be no command presented
to activated bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery Time
(tWR) is needed to guarantee that the last data has been completely written.
5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be
precharged.
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )
OP code
Refresh
Operation
Mode Register Set
Extended Mode Register Set
DDR SDRAM SIMPLIFIED COMMAND TRUTH TABLE
相關(guān)PDF資料
PDF描述
IS43R16320A 32Meg x 16 512-MBIT DDR SDRAM
IS43R16320A-6TL 32Meg x 16 512-MBIT DDR SDRAM
IS43R16800A-6 8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-6T 8Meg x 16 128-MBIT DDR SDRAM
IS43R16800A-6TL 8Meg x 16 128-MBIT DDR SDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R16160A-5T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A-5TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 16 256-MBIT DDR SDRAM
IS43R16160A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 16 256-MBIT DDR SDRAM
IS43R16160B 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
IS43R16160B-5BI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:32Mx8, 16Mx16 256Mb DDR Synchronous DRAM
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