參數(shù)資料
型號(hào): IS43R16160A
廠商: Integrated Silicon Solution, Inc.
英文描述: 16Meg x 16 256-MBIT DDR SDRAM
中文描述: 16Meg × 16 256兆位DDR SDRAM的
文件頁(yè)數(shù): 35/56頁(yè)
文件大小: 792K
代理商: IS43R16160A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
35
ISSI
IS43R16160A
SLEW RATE DERATING VALUES
(Notes: 14) 0°C T
A
+70°C; V
DDQ
= +2.5V ±0.2V, V
DD
= +2.5V ±0.2V for
DDR400 V
DDQ
= +2.6V ±0.1V, V
DD
= +2.6V ±0.1V
SLEW RATE DERATING VALUES
(Note: 31) 0°C T
A
+70°C; V
DDQ
= +2.5V ±0.2V, V
DD
= +2.5V ±0.2V for
DDR400 V
DDQ
= +2.6V ±0.1V, V
DD
= +2.6V ±0.1V
NOTES:
1. All voltages referenced to VSS.
2. Tests for AC timing, IDD, and electrical AC and DC characteristics may be conducted at nominal
reference/supply voltage levels, but the related specifications and device operation are guaranteed for the
full voltage range specified.
3. Outputs measured with equivalent load:
ADDRESS / COMMAND
SLEW RATE
t
IS
t
IH
UNITS
NOTES
0.500V / ns
0
0
ps
14
0.400V / ns
+50
+50
ps
14
0.300V / ns
+100
+100
ps
14
0.200V / ns
+150
+150
ps
14
Dat
a
, DQS, DM
SLEW RATE
t
DS
t
DH
UNITS
NOTES
0.500V / ns
0
0
ps
31
0.400V / ns
+75
+75
ps
31
0.300V / ns
+150
+150
ps
31
0.200V / ns
+225
+225
ps
31
Output
(V
OUT
)
V
TT
50
Reference
Point
30pF
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