參數(shù)資料
型號: IS43R16160A
廠商: Integrated Silicon Solution, Inc.
英文描述: 16Meg x 16 256-MBIT DDR SDRAM
中文描述: 16Meg × 16 256兆位DDR SDRAM的
文件頁數(shù): 51/56頁
文件大?。?/td> 792K
代理商: IS43R16160A
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00B
11/28/05
51
ISSI
IS43R16160A
Figure 44 - BANK READ ACCESS
CK
/CK
COMMAND
NOP
NOP
NOP
NOP
READ
ACT
CKE
RA
RA
RA
RA
RA
A10
BA0, BA1
Bank
x
Bank
x
NOP
NOP
NOP
PRE
DIS AP
ONE BANK
ALL BANKS
tCK
tCH
tCL
tIS
tIS
tIH
tIS
tIS
tIH
tIH
tIH
tIS
tIH
RA
DO
n
= Data Out from column
n
Burst Length = 4 in the case shown
3 subsequent elements of Data Out are provided in the programmed order following DO
n
DIS AP = Disable Autoprecharge
* = "Don't Care", if A10 is HIGH at this point
PRE = PRECHARGE, ACT = ACTIVE, RA = Row Address, BA = Bank Address
NOP commands are shown for ease of illustration; other commands may be valid at these times
Note that tRCD > tRCD MIN so that the same timing applies if Autoprecharge is enabled (in which case tRAS would be limiting)
tRCD
tRAS
tRC
*Bank
x
Bank
x
tRP
CL = 2
Col
n
ACT
A0-A7
A8, A9, A11
DON'T CARE
DQ
DM
DQS
Case 1:
tAC/tDQSCK = min
Case 2:
tAC/tDQSCK = max
DQ
DQS
tRPRE
tRPRE
t
t
t
min
HZ
t
HZ
t
min
LZ
t
LZ
t
LZ
t
min
LZ
t
min
AC
t
DQSCK
t
min
t
AC
DO
n
DO
n
DQSCK
RPST
RPST
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