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參數(shù)資料
| 型號： | IS43R32400A-5B |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 4Meg x 32 128-MBIT DDR SDRAM |
| 中文描述： | 4M X 32 DDR DRAM, 0.7 ns, PBGA144 |
| 封裝： | 12 X 12 MM, 0.80 MM PITCH, MINI, FBGA-144 |
| 文件頁數(shù)： | 10/25頁 |
| 文件大小： | 1295K |
| 代理商： | IS43R32400A-5B |
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
ISSI
IS43R32400A
DC ELECTRICAL CHARACTERISTICS
(V
DD
= 2.5V +/- 5%, T
A
= 0
o
C to +70
o
C)
SymbolParameter
Test Condition
I
DD
0
Operating Current
One bank operation; Active-Precharge; DQ, DM and DQS
inputs change once per clock cycle; Address and Control
inputs change once per two clock cycles; tRC = tRC (min);
tCK = tCK (min)
I
DD
1
Operating Current
One bank operation; Active-Read-Precharge; BL = 4; CL = 4;
Address and Control inputs change once per clock cycle;
tRCDRD = 4 x tCK; tRC = tRC (min); tCK = tCK (min);
IOUT = 0mA;
I
DD
2
P
Precharge Power-Down
All banks Idle; tCK = tCK (min); CKE = Low
Standby Current
I
DD
2
N
Idle Standby Current
All banks idle; Address and control inputs change once per
clock cycle; CKE = High;
CS
= High (Deselect); VIN = VREF
for DQ, DQS, and DM; tCK = tCK (min)
I
DD
3
P
Active Power-Down
One bank Active; CKE = Low; tCK = tCK (min)
Standby Current
I
DD
3
N
Active Standby Current
One bank Active;
CS
= High; CKE = High; Address and
Control inputs change once per clock cycle; DQ, DQS, and
DM change twice per clock cycle; tRC = tRC (max);
tCK = tCK (min)
I
DD
4
R
Operating Current
One bank Active; BL = 2; Address and Control inputs
Burst Read
change once per clock cycle; tCK = tCK (min); IOUT = 0mA
I
DD
4
W
Operating Current
One bank Active; BL = 2; Address and Control inputs change
Burst Write
once per clock cycle; DQ, DQS, DM change twice per clock
cycle; tCK = tCK (min)
I
DD
5
Auto Refresh Current
tRC = tRFC (min); tCK = tCK (min)
I
DD
6
Self Refresh Current
CKE
≤
0.2V; tCK = tCK (min)
I
DD
7
Operating Current
Four bank interleaved Reads with Auto Precharge; BL = 4;
Address and Controls inputs change per Read, Write, or
Active command; tRC = tRC (min); tCK = tCK (min)
Notes:
1.Operating outside the “Absolute Maximum Ratings” may lead to temporary or permanent device failure.
2.Power up sequence describe in “Initialization” section.
3. All voltages are referenced to V
SS
.
Unit
160
mA
240
40
mA
mA
80
40
mA
mA
100
mA
420
mA
270
280
3
mA
mA
mA
550
mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS43R32400A-5BL | 4Meg x 32 128-MBIT DDR SDRAM |
| IS43R32400A-6B | 4Meg x 32 128-MBIT DDR SDRAM |
| IS43R32400A-6BI | 4Meg x 32 128-MBIT DDR SDRAM |
| IS43R32400A-6BL | 4Meg x 32 128-MBIT DDR SDRAM |
| IS43R32400A-6BLI | 4Meg x 32 128-MBIT DDR SDRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS43R32400A-5BL | 功能描述:動態(tài)隨機存取存儲器 128M 2.5v 4Mx32 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R32400A-5BL-TR | 功能描述:動態(tài)隨機存取存儲器 128M 2.5v 4Mx32 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R32400A-5B-TR | 功能描述:動態(tài)隨機存取存儲器 128M 2.5v 4Mx32 400MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R32400A-6B | 功能描述:動態(tài)隨機存取存儲器 128M 2.5v 4Mx32 333MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲容量:16 MB 最大時鐘頻率: 訪問時間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube |
| IS43R32400A-6BI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:4Meg x 32 128-MBIT DDR SDRAM |
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