參數(shù)資料
型號(hào)： IS43R32400A-6BL
廠商： INTEGRATED SILICON SOLUTION INC
元件分類(lèi)： DRAM
英文描述： 4Meg x 32 128-MBIT DDR SDRAM
中文描述： 4M X 32 DDR DRAM, 0.7 ns, PBGA144
封裝： 12 X 12 MM, 0.80 MM PITCH, LEAD FREE, MINI, FBGA-144
文件頁(yè)數(shù)： 1/25頁(yè)
文件大?。?/td> 1295K
代理商： IS43R32400A-6BL
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. 00D
02/15/06
1
ISSI
IS43R32400A
Copyright 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Clock Frequency: 200, 166, 100 MHz
Power supply (V
DD
and V
DDQ
): 2.5V
SSTL 2 interface
Four internal banks to hide row Pre-charge
and Active operations
Commands and addresses register on positive
clock edges (CLK)
Bi-directional Data Strobe signal for data cap-
ture
Differential clock inputs (CLK and
CLK
) for
two data accesses per clock cycle
Data Mask feature for Writes supported
DLL aligns data I/O and Data Strobe transitions
with clock inputs
Half-strength and Matched drive strength
options
Programmable burst length for Read and Write
operations
Programmable CAS Latency (3, 4, 5 clocks)
Programmable burst sequence: sequential or
interleaved
Burst concatenation and truncation supported
for maximum data throughput
Auto Pre-charge option for each Read or Write
burst
4096 refresh cycles every 32ms
Auto Refresh and Self Refresh Modes
Pre-charge Power Down and Active Power
Down Modes
Industrial Temperature Availability
Lead-free Availability
4Meg x 32
128-MBIT DDR SDRAM
PRELIMINARY INFORMATION
FEBRUARY 2006
IS43R32400A
1M x32x4 Banks
V
DD
: 2.5V
V
DDQ
: 2.5V
144-ball BGA
DEVICE OVERVIEW
I
SSI’s 128-Mbit DDR SDRAM achieves high-speed
data transfer using pipeline architecture and two data
word accesses per clock cycle. The 134,217,728-bit
memory array is internally organized as four banks of
32M-bit to allow concurrent operations. The pipeline
allows Read and Write burst accesses to be virtually
continuous, with the option to concatenate or truncate
the bursts. The programmable features of burst
length, burst sequence and CAS latency enable
further advantages. The device is available in 32-bit
data word size. Input data is registered on the I/O pins
on both edges of Data Strobe signal(s), while output
data is referenced to both edges of Data Strobe and
both edges of CLK. Commands are registered on the
positive edges of CLK. Auto Refresh, Active Power
Down, and Pre-charge Power Down modes are
enabled by using clock enable (CKE) and other inputs
in an industry-standard sequence. All input and
output voltage levels are compatible with SSTL 2.
KEY TIMING PARAMETERS
Parameter
-5
-6
Unit
CLK Cycle Time (min.)
CAS
Latency = 5
CAS
Latency = 4
CAS
Latency = 3
CLK Frequency (max.)
CAS
Latency = 5
CAS
Latency = 4
CAS
Latency = 3
5
5
5
6
6
6
ns
ns
ns
200
200
200
166
166
166
MHz
MHz
MHz
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS43R32400A-6BLI 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:4Meg x 32 128-MBIT DDR SDRAM
IS43R32400A-6BL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 4Mx32 333MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R32400A-6B-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M 2.5v 4Mx32 333MHz RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R32400D-4BL 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (4Mx32) 250MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
IS43R32400D-4BL-TR 功能描述:動(dòng)態(tài)隨機(jī)存取存儲(chǔ)器 128M (4Mx32) 250MHz DDR 2.5v RoHS:否 制造商:ISSI 數(shù)據(jù)總線寬度:16 bit 組織:1 M x 16 封裝 / 箱體:SOJ-42 存儲(chǔ)容量:16 MB 最大時(shí)鐘頻率: 訪問(wèn)時(shí)間:50 ns 電源電壓-最大:7 V 電源電壓-最小:- 1 V 最大工作電流:90 mA 最大工作溫度:+ 85 C 封裝:Tube
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