參數(shù)資料
型號(hào): IS61LV5128
廠商: Integrated Silicon Solution, Inc.
英文描述: 512K x 8 High-Speed CMOS Static RAM(512K x 8 高速CMOS靜態(tài)RAM)
中文描述: 為512k × 8高速CMOS靜態(tài)RAM(為512k × 8高速的CMOS靜態(tài)RAM)的
文件頁數(shù): 3/8頁
文件大?。?/td> 68K
代理商: IS61LV5128
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. A
05/02/00
3
IS61LV5128
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
=
4.0 mA
2.4
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 8.0 mA
0.4
V
V
IH
Input HIGH Voltage
2.0
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
0.3
0.8
V
I
LI
Input Leakage
GND
V
IN
V
CC
Com.
Ind.
1
5
1
5
μA
I
LO
Output Leakage
GND
V
OUT
V
CC
, Outputs Disabled
Com.
Ind.
1
5
1
5
μA
Note:
1. V
IL
=
3.0V for pulse width less than 10 ns.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
I/O
Input/Output Capacitance
V
OUT
= 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.3V.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-10 ns
Min.
-12 ns
Min.
-15 ns
Symbol
Parameter
Test Conditions
Max.
Max.
Min.
Max.
Unit
I
CC
Vcc Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
.
Com.
Ind.
170
150
170
130
150
mA
I
SB
TTL Standby
Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = f
MAX
.
Com.
Ind.
70
60
70
50
60
mA
I
SB
1
TTL Standby
Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
Com.
Ind.
20
20
25
20
25
mA
I
SB
2
CMOS Standby
Current
(CMOS Inputs)
V
CC
= Max.,
CE
V
CC
0.2V,
V
IN
V
CC
0.2V, or
V
IN
0.2V, f = 0
Com.
Ind.
10
10
15
10
15
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
OPERATING RANGE
10 ns
V
CC
12 ns, 15 ns
V
CC
Range
Ambient Temperature
Commercial
0
°
C to +70
°
C
3.3V +10%, -5%
3.3V ± 10%
Industrial
40
°
C to +85
°
C
3.3V +10%, -5%
3.3V ± 10%
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