參數(shù)資料
型號(hào): IS61LV5128
廠商: Integrated Silicon Solution, Inc.
英文描述: 512K x 8 High-Speed CMOS Static RAM(512K x 8 高速CMOS靜態(tài)RAM)
中文描述: 為512k × 8高速CMOS靜態(tài)RAM(為512k × 8高速的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 5/8頁(yè)
文件大小: 68K
代理商: IS61LV5128
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. A
05/02/00
5
IS61LV5128
ISSI
t
RC
t
OHA
t
AA
t
DOE
t
LZOE
t
ACE
t
LZCE
t
HZOE
HIGH-Z
DATA VALID
CE_RD2.eps
ADDRESS
OE
CE
D
OUT
t
HZCE
READ CYCLE NO. 2
(1,3)
(
CE
and
OE
Controlled)
Notes:
1.
WE
is HIGH for a Read Cycle.
2. The device is continuously selected.
OE
,
CE
= V
IL
.
3. Address is valid prior to or coincident with
CE
LOW transitions.
AC WAVEFORMS
READ CYCLE NO. 1
(1,2)
(Address Controlled) (
CE
=
OE
= V
IL
)
DATA VALID
READ1.eps
PREVIOUS DATA VALID
t
AA
t
OHA
t
OHA
t
RC
D
OUT
ADDRESS
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IS61LV6416 64K x 16 High-Speed CMOS Static RAM(3.3V,64K x 16 高速CMOS靜態(tài)RAM)
IS61LV6424 64K x 24 High-Speed CMOS Static RAM(3.3V,64K x 24 高速CMOS靜態(tài)RAM)
IS61LV6432 64K x 32 Synchronous Pipelined SRAM(64K x 32 同步流水線靜態(tài)RAM)
IS61LV6464 64K x 64 Synchronous Pipelined SRAM(64K x 64 同步流水線靜態(tài)RAM)
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參數(shù)描述
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