參數(shù)資料
型號: IS61LV632A
廠商: Integrated Silicon Solution, Inc.
英文描述: 32K x 32 Synchronous Fast SRAM(32K x 32 同步快速靜態(tài)RAM)
中文描述: 32K的× 32同步快速靜態(tài)存儲器(32K的× 32同步快速靜態(tài)內(nèi)存)
文件頁數(shù): 5/16頁
文件大小: 176K
代理商: IS61LV632A
ISSI
IS61LV632A
Integrated Silicon Solution, Inc.
PRELIMINARY
SR017-1C
05/18/98
5
INTERLEAVED BURST ADDRESS TABLE (MODE = V
CCQ
or No Connect)
External Address
A1 A0
1st Burst Address
A1 A0
2nd Burst Address
A1 A0
3rd Burst Address
A1 A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
LINEAR BURST ADDRESS TABLE (MODE = GND
Q
)
0,0
1,0
0,1
A1', A0' = 1,1
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
T
BIAS
T
STG
P
D
I
OUT
V
IN
, V
OUT
Voltage Relative to GND for I/O Pins
V
IN
Voltage Relative to GND for
for Address and Control Inputs
Parameter
Temperature Under Bias
Storage Temperature
Power Dissipation
Output Current (per I/O)
Value
–10 to +85
–55 to +150
1.8
100
–0.5 to V
CCQ
+ 0.3
–0.5 to 4.6
Unit
°
C
°
C
W
mA
V
V
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
2. This device contains circuity to protect the inputs against damage due to high static voltages
or electric fields; however, precautions may be taken to avoid application of any voltage higher
than maximum rated voltages to this high-impedance circuit.
3. This device contains circuitry that will ensure the output devices are in High-Z at power up.
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