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參數(shù)資料
| 型號： | ISL12020MIRZ-EVALZ |
| 廠商： | Intersil |
| 文件頁數(shù)： | 31/34頁 |
| 文件大?。?/td> | 0K |
| 描述： | EVAL BOARD FOR ISL12020MIRZ |
| 產(chǎn)品培訓(xùn)模塊： | Solutions for Industrial Control Applications |
| 標準包裝： | 1 |
| 主要目的： | 計時，實時時鐘（RTC） |
| 嵌入式： | 否 |
| 已用 IC / 零件： | ISL12020M |
| 主要屬性： | 128 B SRAM，可編程夏令時 |
| 次要屬性： | I²C 接口 |
| 已供物品： | 板 |
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ISL12020M
6
FN6667.5
December 13, 2011
Absolute Maximum Ratings
Thermal Information
Voltage on VDD, VBAT and IRQ/FOUT pins
(Respect to Ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.0V
Voltage on SCL and SDA pins
(Respect to Ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to VDD + 0.3V
Voltage on X1 and X2 pins
(Respect to Ground, Note 6) . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 2.5V
ESD Rating
Human Body Model
(Per MIL-STD-883 Method 3014) . . . . . . . . . . . . . . . . . . . . . . . . . . >3kV
Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >300V
Latch Up (Tested per JESD-78B; Class 2, Level A) . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA or 1.5 * VMAX Input
Shock Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . 5000g, 0.3ms, 1/2 sine
Vibration (Ultrasound cleaning not advised) . . . . . . . . . . . 20g/10-2000Hz,
Thermal Resistance (Typical)
JA (°C/W)
JC (°C/W)
20 Lead DFN (Notes 4, 5) . . . . . . . . . . . . . . 40
3.5
Maximum Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . .+85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C
Pb-Free Reflow Profile (Note 7). . . . . . . . . . . . . . . . . . . . . . . . see link below
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product
reliability and result in failures not covered by warranty.
NOTES:
4.
JA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. For
JC, the “case temp” location is the center of the exposed metal pad on the package underside.
6. The X1 and X2 pins are connected internally to a crystal and should be a floating electrical connection.
7. The ISL12020M Oscillator Initial Accuracy can change after solder reflow attachment. The amount of change will depend on the reflow temperature
and length of exposure. A general rule is to use only one reflow cycle and keep the temperature and time as short as possible. Changes on the order
of ±1ppm to ±3ppm can be expected with typical reflow profiles.
DC Operating Characteristics - RTC Test Conditions: VDD = +2.7 to +5.5V, TA= -40°C to +85°C,unlessotherwise stated. Boldface
limits apply over the operating temperature range, -40°C to +85°C.
SYMBOL
PARAMETER
CONDITIONS
MIN
(Note 8)
TYP
(Note 9)
MAX
(Note 8)
UNITS
NOTES
VDD
Main Power Supply
(Note 10)
2.7
5.5
V
VBAT
Battery Supply Voltage
(Note 10)
1.8
5.5
IDD1
Supply Current. (I2Cnot active,
temperature conversion not active, FOUT
not active)
VDD = 5V
4.1
15
A
VDD = 3V
3.5
14
A
IDD2
Supply Current. (I2C Active, Temperature
Conversion not Active, FOUT not Active)
VDD = 5V
200
500
A
IDD3
Supply Current. (I2Cnot Active,
Temperature Conversion Active, FOUT not
Active)
VDD = 5V
120
400
A
IBAT
Battery Supply Current
VDD = 0V, VBAT = 3V, TA =+25°C
1.0
1.6
A
VDD = 0V, VBAT = 3V
1.0
5.0
A
IBATLKG
Battery Input Leakage
VDD = 5.5V, VBAT = 1.8V
100
nA
ILI
Input Leakage Current on SCL
VIL = 0V, VIH = VDD
-1.0
±0.1
1.0
A
ILO
I/O Leakage Current on SDA
VIL = 0V, VIH = VDD
-1.0
±0.1
1.0
A
VBATM
Battery Level Monitor Threshold
-100
+100
mV
VPBM
Brownout Level Monitor Threshold
-100
+100
mV
VTRIP
VBAT Mode Threshold
(Note 10)
2.0
2.2
2.4
V
VTRIPHYS VTRIP Hysteresis
30
mV
VBATHYS VBAT Hysteresis
50
mV
Fout25°C Oscillator Initial Accuracy
VDD = 3.3V, TA = +25°C
±2
ppm
FoutT
Oscillator Stability vs Temperature
VDD = 3.3V
-5
+5
ppm
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|---|---|
| ISL12020MIRZ-T | 功能描述:實時時鐘 LDAL TIME CLK & TEMP COMPENSATED CR RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| ISL12020MIRZ-T7A | 功能描述:實時時鐘 LDAL TIME CLK & TEMP COMPENSATED CR RoHS:否 制造商:Microchip Technology 功能:Clock, Calendar. Alarm RTC 總線接口:I2C 日期格式:DW:DM:M:Y 時間格式:HH:MM:SS RTC 存儲容量:64 B 電源電壓-最大:5.5 V 電源電壓-最小:1.8 V 最大工作溫度:+ 85 C 最小工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:PDIP-8 封裝:Tube |
| ISL12021 | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Real Time Clock with On Chip Temp Compensation 【5ppm |
| ISL12021CVZ | 功能描述:IC RTC LP BATT BACK SRAM 14TSSOP RoHS:是 類別:集成電路 (IC) >> 時鐘/計時 - 實時時鐘 系列:- 產(chǎn)品培訓(xùn)模塊:Obsolescence Mitigation Program 標準包裝:1 系列:- 類型:時鐘/日歷 特點:警報器，閏年，SRAM 存儲容量:- 時間格式:HH:MM:SS（12/24 小時） 數(shù)據(jù)格式:YY-MM-DD-dd 接口:SPI 電源電壓:2 V ~ 5.5 V 電壓 - 電源，電池:- 工作溫度:-40°C ~ 85°C 安裝類型:表面貼裝 封裝/外殼:8-WDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-TDFN EP 包裝:管件 |
| ISL12021IVZ | 制造商:INTERSIL 制造商全稱:Intersil Corporation 功能描述:Real Time Clock with On Chip Temp Compensation 【5ppm |
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