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參數(shù)資料
| 型號： | K4S641632C |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
| 中文描述： | 100萬× 16 × 4銀行同步DRAM |
| 文件頁數(shù)： | 26/42頁 |
| 文件大小： | 1169K |
| 代理商： | K4S641632C |
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CMOS SDRAM
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19
ELECTRONICS
K4S641632C
*Note :
1. All input except CKE & DQM can be don't care when CS is high at the CLK high going edge.
2. Bank active & read/write are controlled by BA0~BA1.
3. Enable and disable auto precharge function are controlled by A10/AP in read/write command
BA0
0
0
1
1
0
0
1
1
Operation
Disable auto precharge, leave bank A active at end of burst.
Disable auto precharge, leave bank B active at end of burst.
Disable auto precharge, leave bank C active at end of burst.
Disable auto precharge, leave bank D active at end of burst.
Enable auto precharge, precharge bank A at end of burst.
Enable auto precharge, precharge bank B at end of burst.
Enable auto precharge, precharge bank C at end of burst.
Enable auto precharge, precharge bank D at end of burst.
4. A10/AP and BA0~BA1 control bank precharge when precharge command is asserted.
A10/AP
0
1
BA1
0
1
0
1
0
1
0
1
BA0
0
0
1
1
Active & Read/Write
Bank A
Bank B
Bank C
Bank D
BA1
0
1
0
1
BA0
0
0
1
1
x
Precharge
Bank A
Bank B
Bank C
Bank D
All Banks
A10/AP
0
0
0
0
1
BA1
0
1
0
1
x
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K4S641632D | Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC |
| K4S641633H-C | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S641633H-F1H | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S641633H-F1L | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
| K4S641633H-F75 | 1M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K4S641632C-TC/L10 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L1H | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L1L | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L60 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
| K4S641632C-TC/L70 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1M x 16Bit x 4 Banks Synchronous DRAM |
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