參數(shù)資料
型號： K4S641632C
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
中文描述： 100萬× 16 × 4銀行同步DRAM
文件頁數(shù)： 3/42頁
文件大?。?/td> 1169K
代理商： K4S641632C
K4S641632C
CMOS SDRAM
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Voltage on any pin relative to Vss
V
IN
, V
OUT
-1.0 ~ 4.6
V
Voltage on V
DD
supply relative to Vss
V
DD
, V
DDQ
-1.0 ~ 4.6
V
Storage temperature
T
STG
-55 ~ +150
°
C
Power dissipation
P
D
1
W
Short circuit current
I
OS
50
mA
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Note :
DC OPERATING CONDITIONS
Recommended operating conditions (Voltage referenced to V
SS
= 0V, T
A
= 0 to 70
°
C)
Parameter
Symbol
Min
Typ
Max
Unit
Note
Supply voltage
V
DD
, V
DDQ
3.0
3.3
3.6
V
5
Input logic high voltage
V
IH
2.0
3.0
V
DDQ
+0.3
V
1
Input logic low voltage
V
IL
-0.3
0
0.8
V
2
Output logic high voltage
V
OH
2.4
-
-
V
I
OH
= -2mA
Output logic low voltage
V
OL
-
-
0.4
V
I
OL
= 2mA
Input leakage current (Inputs)
I
IL
-1
-
1
uA
3
Input leakage current (I/O pins)
I
IL
-1.5
-
1.5
uA
3,4
CAPACITANCE
(V
DD
= 3.3V, T
A
= 23
°
C, f = 1MHz, V
REF
= 1.4V
±
200
mV)
Pin
Symbol
Min
Max
Unit
Clock
C
CLK
2.5
4.0
pF
RAS, CAS, WE, CS, CKE, L(U)DQM
C
IN
2.5
5.0
pF
Address
C
ADD
2.5
5.0
pF
DQ
0
~ DQ
15
C
OUT
4.0
6.5
pF
1. V
IH
(max) = 5.6V AC. The overshoot voltage duration is
≤
3ns.
2. V
IL
(min) = -2.0V AC. The undershoot voltage duration is
≤
3ns.
3. Any input 0V
≤
V
IN
≤
V
DDQ
.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
4. Dout is disabled, 0V
≤
V
OUT
≤
V
DDQ.
5. The VDD condition of K4S641632C-60 is 3.135V~3.6V.
Notes :
相關(guān)PDF資料
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