- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄224103 > K4T1G044QC-ZCLE6 256M X 4 DDR DRAM, 0.45 ns, PBGA60 PDF資料下載
參數(shù)資料
| 型號： | K4T1G044QC-ZCLE6 |
| 元件分類： | DRAM |
| 英文描述： | 256M X 4 DDR DRAM, 0.45 ns, PBGA60 |
| 封裝： | ROHS COMPLIANT, FBGA-60 |
| 文件頁數(shù)： | 9/26頁 |
| 文件大?。?/td> | 487K |
| 代理商： | K4T1G044QC-ZCLE6 |
DDR2 SDRAM
K4T1G044QC
K4T1G084QC
Rev. 1.1 June 2007
17 of 26
Speed
DDR2-800(F7)
DDR2-667(E6)
DDR2-533(D5)
DDR2-400(CC)
Units
Bin (CL - tRCD - tRP)
6-6-6
5 - 5 - 5
4 - 4 - 4
3 - 3 - 3
Parameter
min
max
min
max
min
max
min
max
tCK, CL=3
-
5
8
5
8
5
8
ns
tCK, CL=4
3.75
8
3.75
8
3.75
8
5
8
ns
tCK, CL=5
3
8
3
8
3.75
8
-
ns
tCK, CL=6
2.5
8
-
ns
tRCD
15
-
15
ns
tRP
15
-
15
ns
tRC
60
-
60
55
ns
tRAS
45
70000
45
70000
45
70000
40
70000
ns
12.0 Input/Output capacitance
Parameter
Symbol
DDR2-400
DDR2-533
DDR2-667
DDR2-800
Units
Min
Max
Min
Max
Min
Max
Input capacitance, CK and CK
CCK
1.0
2.0
1.0
2.0
1.0
2.0
pF
Input capacitance delta, CK and CK
CDCK
x
0.25
x
0.25
x
0.25
pF
Input capacitance, all other input-only pins
CI
1.0
2.0
1.0
2.0
1.0
1.75
pF
Input capacitance delta, all other input-only pins
CDI
x
0.25
x
0.25
x
0.25
pF
Input/output capacitance, DQ, DM, DQS, DQS
CIO
2.5
4.0
2.5
3.5
2.5
3.5
pF
Input/output capacitance delta, DQ, DM, DQS, DQS
CDIO
x
0.5
x
0.5
x
0.5
pF
13.0 Electrical Characteristics & AC Timing for DDR2-800/667/533/400
(0
°C < TOPER < 95 °C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V)
13.1 Refresh Parameters by Device Density
Parameter
Symbol
256Mb
512Mb
1Gb
2Gb
4Gb
Units
Refresh to active/Refresh command time
tRFC
75
105
127.5
195
327.5
ns
Average periodic refresh interval
tREFI
0
°C ≤ TCASE ≤ 85°C
7.8
s
85
°C < TCASE ≤ 95°C
3.9
s
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
相關PDF資料 |
PDF描述 |
|---|---|
| K4T56163QI-ZLD50 | 16M X 16 SYNCHRONOUS DRAM, 0.5 ns, PBGA84 |
| K5A3240YT | Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM |
| K6R1004C1C | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
| K6R1004C1C-I10 | 256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating). |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| K4T1G044QE | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G044QE-HCLE6 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G044QE-HCLE7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G044QE-HCLF7 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb E-die DDR2 SDRAM |
| K4T1G044QF | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:1Gb F-die DDR2 SDRAM |
發(fā)布緊急采購，3分鐘左右您將得到回復。