參數(shù)資料
型號： K9K1G08U0A1
廠商： SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述： 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
中文描述： 128M的× 8位/ 64米× 16位NAND閃存
文件頁數(shù)： 12/43頁
文件大?。?/td> 906K
代理商： K9K1G08U0A1
FLASH MEMORY
12
K9K1G08U0A
K9K1G08Q0A
K9K1G16U0A
K9K1G16Q0A
Preliminary
DC AND OPERATING CHARACTERISTICS
(Recommended operating conditions otherwise noted.)
NOTE
: V
IL
can undershoot to -0.4V and V
IH
can overshoot to V
CC
+0.4V for durations of 20 ns or less
Parameter
Symbol
Test Conditions
K9K1GXXQ0A(1.8V)
K9K1GXXU0A(3.3V)
Unit
Min
Typ
Max
Min
Typ
Max
Operat-
ing
Current
Sequential Read
I
CC
1
tRC=50ns, CE=V
IL
I
OUT
=0mA
-
10
20
-
15
30
mA
Program
I
CC
2
-
-
10
20
-
15
30
Erase
I
CC
3
-
-
10
20
-
15
30
Stand-by Current(TTL)
I
SB
1
CE=V
IH
, WP=0V/V
CC
-
-
1
-
-
1
Stand-by Current(CMOS)
I
SB
2
CE=V
CC
-0.2, WP=0V/V
CC
-
20
100
-
20
100
μ
A
Input Leakage Current
I
LI
V
IN
=0 to Vcc(max)
-
-
±
20
-
-
±
20
Output Leakage Current
I
LO
V
OUT
=0 to Vcc(max)
-
-
±
20
-
-
±
20
Input High Voltage
V
IH*
I/O pins
V
CCQ
-0.4
-
V
CCQ
+0.3
2.0
-
V
CCQ
+0.3
V
Except I/O pins
V
CC
-0.4
-
V
CC
+0.3
2.0
-
V
CC
+0.3
Input Low Voltage, All inputs
V
IL*
-
-0.3
-
0.4
-0.3
-
0.8
Output High Voltage Level
V
OH
K9K1GXXQ0A :I
OH
=100
μ
A
K9K1GXXU0A :I
OH
=400
μ
A
Vcc
Q
-0.1
-
-
2.4
-
-
Output Low Voltage Level
V
OL
K9K1GXXQ0A :I
OL
=100uA
K9K1GXXU0A :I
OL
=2.1mA
-
-
0.1
-
-
0.4
Output Low Current(R/B)
I
OL
(R/B)
K9K1GXXQ0A :V
OL
=0.1V
K9K1GXXU0A :V
OL
=0.4V
3
4
-
8
10
-
mA
RECOMMENDED OPERATING CONDITIONS
(Voltage reference to GND, K9K1GXXX0A-XCB0
:
T
A
=0 to 70
°
C, K9K1GXXX0A-XIB0
:
T
A
=-40 to 85
°
C)
Parameter
Symbol
K9K1GXXQ0A(1.8V)
K9K1GXXU0A(3.3V)
Unit
Min
Typ.
Max
Min
Typ.
Max
Supply Voltage
V
CC
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
CCQ
1.70
1.8
1.95
2.7
3.3
3.6
V
Supply Voltage
V
SS
0
0
0
0
0
0
V
ABSOLUTE MAXIMUM RATINGS
NOTE
:
1. Minimum DC voltage is -0.6V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <30ns.
Maximum DC voltage on input/output pins is V
CC,
+0.3V which, during transitions, may overshoot to V
CC
+2.0V for periods <20ns.
2. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions
as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Parameter
Symbol
Rating
Unit
K9K1GXXQ0A(1.8V)
K9K1GXXU0A(3.3V)
Voltage on any pin relative to V
SS
V
IN/OUT
-0.6 to + 2.45
-0.6 to + 4.6
V
V
CC
-0.2 to + 2.45
-0.6 to + 4.6
V
CCQ
-0.2 to + 2.45
-0.6 to + 4.6
Temperature Under Bias
K9K1GXXX0A-XCB0
T
BIAS
-10 to +125
°
C
K9K1GXXX0A-XIB0
-40 to +125
Storage Temperature
K9K1GXXX0A-XCB0
T
STG
-65 to +150
°
C
K9K1GXXX0A-XIB0
Short Circuit Current
Ios
5
mA
相關(guān)PDF資料
PDF描述
K9K1G16Q0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
K9K1G16U0A 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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K9F1G08R0A Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
K9K1G08U0B 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory
K9K1G08U0B-JIB0000 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays
K9K1G08U0M 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G08U0M-YCB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
K9K1G08U0M-YIB0 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash
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