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參數(shù)資料
| 型號： | K9K1G08U0A1 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| 中文描述： | 128M的× 8位/ 64米× 16位NAND閃存 |
| 文件頁數(shù)： | 19/43頁 |
| 文件大?。?/td> | 906K |
| 代理商： | K9K1G08U0A1 |
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FLASH MEMORY
19
K9K1G08U0A
K9K1G08Q0A
K9K1G16U0A
K9K1G16Q0A
Preliminary
Samsung NAND Flash has two address pointer commands as a substitute for the most significant column address. ’00h’ command
sets the pointer to ’A’ area(0~255word), and ’50h’ command sets the pointer to ’B’ area(256~263word). With these commands, the
starting column address can be set to any of a whole page(0~263word). ’00h’ or ’50h’ is sustained until another address pointer com-
mand is inputted. To program data starting from ’A’ or ’B’ area, ’00h’ or ’50h’ command must be inputted before ’80h’ command is writ-
ten. A complete read operation prior to ’80h’ command is not necessary.
00h
(1) Command input sequence for programming ’A’ area
Address / Data input
80h
10h
00h
80h
10h
Address / Data input
The address pointer is set to ’A’ area(0~255), and sustained
50h
(2) Command input sequence for programming ’B’ area
Address / Data input
80h
10h
50h
80h
10h
Address / Data input
Only ’B’ area can be programmed.
’50h’ command can be omitted.
The address pointer is set to ’B’ area(256~263), and sustained
’00h’ command can be omitted.
It depends on how many data are inputted.
’A’,’B’ area can be programmed.
Pointer Operation of K9K1G16X0A(X16)
Table 3. Destination of the pointer
Command
Pointer position
Area
00h
50h
0 ~ 255 word
256 ~ 263 word
main array(A)
spare array(B)
"A" area
(00h plane)
256 Word
"B" area
(50h plane)
8 Word
"A"
"B"
Internal
Page Register
Pointer select
command
(00h, 50h)
Pointer
Figure 6. Block Diagram of Pointer Operation
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| K9K1G16Q0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K1G16U0A | 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory |
| K9K2G08U1A | 128M x 8 Bit / 256M x 8 Bit NAND Flash Memory |
| K9F1G08R0A | Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVP00; No. of Contacts:99; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Wall Mount Receptacle; Body Style:Straight |
| K9K2G16Q0M-YIB0 | 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| K9K1G08U0B | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:128M x 8 Bit NAND Flash Memory |
| K9K1G08U0B-JIB0000 | 制造商:Samsung Semiconductor 功能描述:1GB SLC DIE STACK X8 FBGA - Trays |
| K9K1G08U0M | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
| K9K1G08U0M-YCB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
| K9K1G08U0M-YIB0 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:nand flash |
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