參數(shù)資料
型號: K9K1G08U0A1
廠商: SAMSUNG SEMICONDUCTOR CO. LTD.
英文描述: 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
中文描述: 128M的× 8位/ 64米× 16位NAND閃存
文件頁數(shù): 40/43頁
文件大?。?/td> 906K
代理商: K9K1G08U0A1
FLASH MEMORY
40
K9K1G08U0A
K9K1G08Q0A
K9K1G16U0A
K9K1G16Q0A
Preliminary
Figure 23. Read ID Operation 1
CE
CLE
I/O
0
~
7
ALE
RE
WE
90h
00h
ECh
Address. 1cycle
Maker code
t
CEA
t
AR
t
REA
Read ID
The device contains a product identification mode, initiated by writing 90h to the command register, followed by an address input of
00h. Four read cycles sequentially output the manufacture code(ECh), and the device code*, Reserved(A5h), Multi plane operation
code(C0h) respectively. A5h must be don’t-cared. C0h means that device supports Multi Plane operation. The command register
remains in Read ID mode until further commands are issued to it. Figure 23 shows the operation sequence.
A5h
C0h
Multi-Plane code
t
WHR
Device
Device Code
K9K1G08Q0A
78h
K9K1G08U0A
79h
K9K1G16Q0A
XX72h
K9K1G16U0A
XX74h
Device*
Code
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