參數(shù)資料
型號: LAMXO640E-3FTN256E
廠商: Lattice Semiconductor Corporation
文件頁數(shù): 5/77頁
文件大小: 0K
描述: IC FPGA 640LUTS 256TQFP
標準包裝: 90
系列: LA-MachXO
可編程類型: 系統(tǒng)內可編程
最大延遲時間 tpd(1): 4.9ns
電壓電源 - 內部: 1.14 V ~ 1.26 V
宏單元數(shù): 320
輸入/輸出數(shù): 159
工作溫度: -40°C ~ 125°C
安裝類型: 表面貼裝
封裝/外殼: 256-LBGA
供應商設備封裝: 256-FTBGA(17x17)
包裝: 托盤
2-10
Architecture
Lattice Semiconductor
LA-MachXO Automotive Family Data Sheet
Table 2-5. PLL Signal Descriptions
For more information on the PLL, please see details of additional technical documentation at the end of this data
sheet.
sysMEM Memory
The LA-MachXO1200 and LA-MachXO2280 devices contain sysMEM Embedded Block RAMs (EBRs). The EBR
consists of a 9-Kbit RAM, with dedicated input and output registers.
sysMEM Memory Block
The sysMEM block can implement single port, dual port, pseudo dual port, or FIFO memories. Each block can be
used in a variety of depths and widths as shown in Table 2-6.
Table 2-6. sysMEM Block Congurations
Signal
I/O
Description
CLKI
I
Clock input from external pin or routing
CLKFB
I
PLL feedback input from PLL output, clock net, routing/external pin or internal feedback from
CLKINTFB port
RST
I
“1” to reset the input clock divider
CLKOS
O
PLL output clock to clock tree (phase shifted/duty cycle changed)
CLKOP
O
PLL output clock to clock tree (No phase shift)
CLKOK
O
PLL output to clock tree through secondary clock divider
LOCK
O
“1” indicates PLL LOCK to CLKI
CLKINTFB
O
Internal feedback source, CLKOP divider output before CLOCKTREE
DDAMODE
I
Dynamic Delay Enable. “1”: Pin control (dynamic), “0”: Fuse Control (static)
DDAIZR
I
Dynamic Delay Zero. “1”: delay = 0, “0”: delay = on
DDAILAG
I
Dynamic Delay Lag/Lead. “1”: Lag, “0”: Lead
DDAIDEL[2:0]
I
Dynamic Delay Input
Memory Mode
Congurations
Single Port
8,192 x 1
4,096 x 2
2,048 x 4
1,024 x 9
512 x 18
256 x 36
True Dual Port
8,192 x 1
4,096 x 2
2,048 x 4
1,024 x 9
512 x 18
Pseudo Dual Port
8,192 x 1
4,096 x 2
2,048 x 4
1,024 x 9
512 x 18
256 x 36
FIFO
8,192 x 1
4,096 x 2
2,048 x 4
1,024 x 9
512 x 18
256 x 36
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