參數(shù)資料
型號: LHF16J06
廠商: Sharp Corporation
英文描述: Flash Memory 16M (1M 】 16 / 2M 】 8)
中文描述: 閃存16M內(nèi)存(100萬】16 / 2米】8)
文件頁數(shù): 36/47頁
文件大?。?/td> 245K
代理商: LHF16J06
LHF16J06
34
Rev. 1.26
6.2.5 AC CHARACTERISTICS - WRITE OPERATIONS
(1)
V
CC
=2.7V-3.6V, T
A
=0°C to +70°C
Parameter
Sym.
t
AVAV
t
PHWL
t
ELWL
t
WLWH
t
SHWH
t
VPWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHRL
t
WHGL
t
QVVL
t
QVSL
t
FVWH
t
WHFV
NOTES:
1. Read timing characteristics during block erase, full chip erase, word/byte write and lock-bit configuration operations are
the same as during read-only operations. Refer to AC Characteristics for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 4 for valid A
IN
and D
IN
for block erase, full chip erase, word/byte write or lock-bit configuration.
4. V
CCW
should be held at V
CCWH1/2
until determination of block erase, full chip erase, word/byte write or lock-bit
configuration success (SR.1/3/4/5=0).
5. If BYTE# switch during reading cycle, exist the regulations separately.
Notes
Min.
90
1
10
50
100
100
50
50
0
0
10
30
Max.
Unit
ns
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
RP# High Recovery to WE# Going Low
CE# Setup to WE# Going Low
WE# Pulse Width
WP#V
IH
Setup to WE# Going High
V
CCW
Setup to WE# Going High
Address Setup to WE# Going High
Data Setup to WE# Going High
Data Hold from WE# High
Address Hold from WE# High
CE# Hold from WE# High
WE# Pulse Width High
WE# High to RY/BY# Going Low or SR.7 Going "0"
Write Recovery before Read
V
CCW
Hold from Valid SRD, RY/BY# High Z
WP# V
IH
Hold from Valid SRD, RY/BY# High Z
BYTE# Setup to WE# Going High
BYTE# Hold from WE# High
2
2
2
3
3
100
0
0
0
50
90
2,4
2,4
5
5
sharp
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