參數(shù)資料
型號(hào): LHF16J06
廠商: Sharp Corporation
英文描述: Flash Memory 16M (1M 】 16 / 2M 】 8)
中文描述: 閃存16M內(nèi)存(100萬(wàn)】16 / 2米】8)
文件頁(yè)數(shù): 40/47頁(yè)
文件大小: 245K
代理商: LHF16J06
RP#(P)
V
IL
t
PLPH
t
PLRZ
V
IH
V
IH
High Z
("1")
V
("0")
V
IL
t
PLPH
RY/BY#(R)
(SR.7)
RP#(P)
V
IL
t
2VPH
(C)RP# rising Timing
V
IH
2.7V
V
IL
RP#(P)
V
CC
(A)Reset During Read Array Mode
(B)Reset During Block Erase, Full Chip Erase, Word/Byte Write or Lock-Bit Configuration
High Z
("1")
V
("0")
RY/BY#(R)
(SR.7)
LHF16J06
38
Rev. 1.26
6.2.7 RESET OPERATIONS
Figure 18. AC Waveform for Reset Operation
Reset AC Specifications
Sym.
t
PLPH
Parameter
Notes
2
Min.
100
Max.
Unit
ns
RP# Pulse Low Time
RP# Low to Reset during Block Erase, Full Chip Erase,
Word/Byte Write or Lock-Bit Configuration
V
CC
2.7V to RP# High
t
PLRZ
1,2
30
μs
t
2VPH
NOTES:
1. If RP# is asserted while a block erase, full chip erase, word/byte write or lock-bit configuration operation is not executing,
the reset will complete within 100ns.
2. A reset time, t
PHQV
, is required from the later of RY/BY#(SR.7) going High Z("1") or RP# going high until outputs are
valid. Refer to AC Characteristics - Read-Only Operations for t
PHQV
.
3. When the device power-up, holding RP# low minimum 100ns is required after V
CC
has been in predefined range and also
has been in stable there.
2,3
100
ns
sharp
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