參數(shù)資料
型號(hào): M12S128168A-10TG
廠商: ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類: DRAM
英文描述: 2M x 16 Bit x 4 Banks Synchronous DRAM
中文描述: 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54
封裝: 0.400 INCH, LEAD FREE, TSOP2-54
文件頁(yè)數(shù): 1/44頁(yè)
文件大?。?/td> 967K
代理商: M12S128168A-10TG
ES MT
M12S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
Nov. 2006
1/44
Revision History
Revision 1.0 (Nov. 09, 2006)
-Original
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12S128168A-6BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-6TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-7BG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128168A-7TG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM
M12S128324A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM