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參數(shù)資料
| 型號： | M12S128168A-10TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 2M x 16 Bit x 4 Banks Synchronous DRAM |
| 中文描述： | 8M X 16 SYNCHRONOUS DRAM, 7 ns, PDSO54 |
| 封裝： | 0.400 INCH, LEAD FREE, TSOP2-54 |
| 文件頁數(shù)： | 14/44頁 |
| 文件大?。?/td> | 967K |
| 代理商： | M12S128168A-10TG |
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ES MT
M12S128168A
Elite Semiconductor Memory Technology Inc.
Revision
:
1.0
Publication Date
:
Nov. 2006
14/44
COMMANDS
Mode register set command
(CS ,RAS ,CAS ,
WE
= Low)
The M12L128168A has a mode register that defines how the device operates. In
this command, A0 through BA0 are the data input pins. After power on, the mode
register set command must be executed to initialize the device.
The mode register can be set only when all banks are in idle state.
During 2CLK following this command, the M12L128168A cannot accept any
other commands.
Activate command
(CS ,RAS = Low,CAS ,
WE
= High)
The M12L128168A has four banks, each with 4,096 rows.
This command activates the bank selected by BA1 and BA0 (BS) and a row
address selected by A0 through A11.
This command corresponds to a conventional DRAM’s RAS falling.
Precharge command
(CS ,RAS ,
WE
= Low,CAS = High )
This command begins precharge operation of the bank selected by BA1 and BA0
(BS). When A10 is High, all banks are precharged, regardless of BA1 and BA0.
When A10 is Low, only the bank selected by BA1 and BA0 is precharged.
After this command, the M12L128168A can’t accept the activate command to the
precharging bank during t
RP
(precharge to activate command period).
This command corresponds to a conventional DRAM’s RAS rising.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12S16161A-7BG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S16161A-7TG | 512K x 16Bit x 2Banks Synchronous DRAM |
| M12S64322A | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S64322A-6BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S64322A-6TG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12S128168A-6BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-6TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-7BG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128168A-7TG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:2M x 16 Bit x 4 Banks Synchronous DRAM |
| M12S128324A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 32 Bit x 4 Banks Synchronous DRAM |
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