- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377801 > M12S16161A-7TG (ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC) 512K x 16Bit x 2Banks Synchronous DRAM PDF資料下載
參數(shù)資料
| 型號(hào)： | M12S16161A-7TG |
| 廠商： | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC |
| 元件分類： | DRAM |
| 英文描述： | 512K x 16Bit x 2Banks Synchronous DRAM |
| 中文描述： | 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50 |
| 封裝： | 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50 |
| 文件頁(yè)數(shù)： | 4/29頁(yè) |
| 文件大小： | 628K |
| 代理商： | M12S16161A-7TG |
第1頁(yè)第2頁(yè)第3頁(yè)當(dāng)前第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)
ES MT
M12S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.1
4/29
DC CHARACTERISTICS
(Recommended operating condition unless otherwise noted, T
A
= 0 to 70
C
°
Version
-7
Parameter
Symbol
Test Condition
CAS
Latency
Unit Note
Operating Current
(One Bank Active)
I
CC1
Burst Length = 1
t
RC
≥
t
RC
(min), t
CC
≥
t
CC
(min), I
OL
= 0mA
100
mA
1
I
CC2P
CKE
≤
V
IL
(max), t
CC
=15ns
2
mA
Precharge Standby
Current in power-down
mode
I
CC2PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
2
I
CC2N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
25
mA
Precharge Standby
Current in non
power-down mode
I
CC2NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
mA
I
CC3P
CKE
≤
V
IL
(max), t
CC
=15ns
10
Active Standby Current
in power-down mode
I
CC3PS
CKE
≤
V
IL
(max), CLK
≤
V
IL
(max), t
CC
=
∞
10
mA
I
CC3N
CKE
≥
V
IH
(min), CS
≥
V
IH
(min), t
CC
=15ns
Input signals are changed one time during 30ns
25
mA
Active Standby Current
in non power-down
mode
(One Bank Active)
I
CC3NS
CKE
≥
V
IH
(min), CLK
≤
V
IL
(max), t
CC
=
∞
Input signals are stable
10
mA
3
120
mA
1
Operating Current
(Burst Mode)
I
CC4
I
OL
= 0Ma, Page Burst
All Band Activated, t
CCD
= t
CCD
(min)
2
120
Refresh Current
I
CC5
t
RC
≥
t
RC
(min)
120
mA
2
Self Refresh Current
I
CC6
CKE
≤
0.2V
1
mA
Note:
1.Measured with outputs open. Addresses are changed only one time during t
CC
(min).
2.Refresh period is 32ms. Addresses are changed only one time during t
CC
(min).
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M12S64322A | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S64322A-6BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S64322A-6TG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S64322A-7BG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
| M12S64322A-7TG | 512K x 32 Bit x 4 Banks Synchronous DRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M12S16161A-7TIG | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM |
| M12S17W30 | 功能描述:電容硬件 MOUNTING HARDWARE RoHS:否 制造商:Cornell Dubilier 系列: 產(chǎn)品: 封裝: |
| M12S22W30 | 制造商:Cornell Dubilier Electronics 功能描述:Cap Accessories Hex Nut Nylon 制造商:CORNELL DUBILIER ELECTRONICS 功能描述:Nuts Hex Hex 30mm 18mm Nylon |
| M12S30W38 | 功能描述:電容硬件 38mm 18mm HEX NUTS NYLON RoHS:否 制造商:Cornell Dubilier 系列: 產(chǎn)品: 封裝: |
| M12S64164A | 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。