參數(shù)資料
型號(hào)： M12S16161A-7TG
廠商： ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC
元件分類： DRAM
英文描述： 512K x 16Bit x 2Banks Synchronous DRAM
中文描述： 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
封裝： 0.400 X 0.825 INCH, 0.80 MM PITCH, LEAD FREE, TSOP2-50
文件頁數(shù)： 9/29頁
文件大小： 628K
代理商： M12S16161A-7TG
ES MT
Burst Length and Sequence
(Burst of Two)
Starting Address
(column address A0 binary)
M12S16161A
Elite Semiconductor Memory Technology Inc.
Publication Date
:
May. 2007
Revision
:
1.1
9/29
Sequential Addressing
Sequence (decimal)
Interleave Addressing
Sequence (decimal)
0
1
0,1
1,0
0,1
1,0
(Burst of Four)
Starting Address
(column address A1-A0, binary)
Sequential Addressing
Sequence (decimal)
0,1,2,3
1,2,3,0
2,3,0,1
3,0,1,2
Interleave Addressing
Sequence (decimal)
0,1,2,3
1,0,3,2
2,3,0,1
3,2,1,0
00
01
10
11
(Burst of Eight)
Starting Address
(column address A2-A0, binary)
Sequential Addressing
Sequence (decimal)
0,1,2,3,4,5,6,7
1,2,3,4,5,6,7,0
2,3,4,5,6,7,0,1
3,4,5,6,7,0,1,2
4,5,6,7,0,1,2,3
5,6,7,0,1,2,3,4
6,7,0,1,2,3,4,5
7,0,1,2,3,4,5,6
Interleave Addressing
Sequence (decimal)
0,1,2,3,4,5,6,7
1,0,3,2,5,4,7,6
2,3,0,1,6,7,4,5
3,2,1,0,7,6,5,4
4,5,6,7,0,1,2,3
5,4,7,6,1,0,3,2
6,7,4,5,2,3,0,1
7,6,5,4,3,2,1,0
000
001
010
011
100
101
110
111
Full page burst is an extension of the above tables of Sequential Addressing, with the length being 256 for 1Mx16 divice.
POWER UP SEQUENCE
1.Apply power and start clock, attempt to maintain CKE= “H”, L(U)DQM = “H” and the other pin are NOP condition at the inputs.
2.Maintain stable power, stable clock and NOP input condition for a minimum of 200us.
3.Issue precharge commands for all banks of the devices.
4.Issue 2 or more auto-refresh commands.
5.Issue mode register set command to initialize the mode register.
Cf.)Sequence of 4 & 5 is regardless of the order.
相關(guān)PDF資料
PDF描述
M12S64322A 512K x 32 Bit x 4 Banks Synchronous DRAM
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M12S64322A-6TG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12S64322A-7BG 512K x 32 Bit x 4 Banks Synchronous DRAM
M12S64322A-7TG 512K x 32 Bit x 4 Banks Synchronous DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M12S16161A-7TIG 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:512K x 16Bit x 2Banks Synchronous DRAM
M12S17W30 功能描述:電容硬件 MOUNTING HARDWARE RoHS:否 制造商:Cornell Dubilier 系列: 產(chǎn)品: 封裝:
M12S22W30 制造商:Cornell Dubilier Electronics 功能描述:Cap Accessories Hex Nut Nylon 制造商:CORNELL DUBILIER ELECTRONICS 功能描述:Nuts Hex Hex 30mm 18mm Nylon
M12S30W38 功能描述:電容硬件 38mm 18mm HEX NUTS NYLON RoHS:否 制造商:Cornell Dubilier 系列: 產(chǎn)品: 封裝:
M12S64164A 制造商:ESMT 制造商全稱:Elite Semiconductor Memory Technology Inc. 功能描述:1M x 16 Bit x 4 Banks Synchronous DRAM
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