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參數(shù)資料
| 型號： | M25PE40 |
| 廠商： | 意法半導體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 14/60頁 |
| 文件大小： | 315K |
| 代理商： | M25PE40 |
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Operating features
M25PE40
14/60
4.7
Status Register
The Status Register contains a number of status and control bits that can be read or set (as
appropriate) by using specific instructions. See
Section 6.4: Read Status Register (RDSR)
for a detailed description of the Status Register bits.
4.8
Protection modes
The environments where non-volatile memory devices are used can be very noisy. No SPI
device can operate correctly in the presence of excessive noise. To help combat this, the
features the following data protection mechanisms:
4.8.1
Protocol-related protections
●
Power On Reset and an internal timer (t
PUW
) can provide protection against inadvertent
changes while the power supply is outside the operating specification.
Program, Erase and Write instructions are checked that they consist of a number of
clock pulses that is a multiple of eight, before they are accepted for execution.
All instructions that modify data must be preceded by a Write Enable (WREN)
instruction to set the Write Enable Latch (WEL) bit. This bit is returned to its reset state
by the following events:
–
Power-up
–
Reset (RESET) driven Low
–
Write Disable (WRDI) instruction completion
–
Page Write (PW) instruction completion
–
Page Program (PP) instruction completion
–
Write to Lock Register (WRLR) instruction completion
–
Page Erase (PE) instruction completion
–
SubSector Erase (SSE) instruction completion
–
Sector Erase (SE) instruction completion
–
Bulk Erase (BE) instruction completion
The Reset (Reset) signal can be driven Low to freeze and reset the internal logic. For
the specific cases of Program and Write cycles, the designer should refer to
Section 6.5: Write Status Register (WRSR)
,
Section 6.9: Page Write (PW)
,
Section 6.10: Page Program (PP)
,
Section 6.12: Page Erase (PE)
,
Section 6.14: Sector
Erase (SE)
, and
Section 6.13: SubSector Erase (SSE)
, and to
Table 12: Device status
after a Reset Low pulse
.
In addition to the low power consumption feature, the Deep Power-down mode offers
extra software protection from inadvertent Write, Program and Erase instructions while
the device is not in active use.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE40VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMP6G | 1A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40S-VMW6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SO |
| M25PE40S-VMW6TG | 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
| M25PE40S-VMW6TG TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SO |
| M25PE40-VMC6G | 功能描述:IC SRL FLSH 4MB 75MHZ 8MLP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| M25PE40-VMC6TG | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
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