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參數(shù)資料
| 型號： | M25PE40 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | DRAM |
| 英文描述： | 4 Mbit Uniform Sector, Serial Flash Memory |
| 中文描述： | 4兆位統(tǒng)一部門，串行閃存 |
| 文件頁數(shù)： | 40/60頁 |
| 文件大小： | 315K |
| 代理商： | M25PE40 |
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Instructions
M25PE40
40/60
6.16
Deep Power-down (DP)
Executing the Deep Power-down (DP) instruction is the only way to put the device in the
lowest consumption mode (the Deep Power-down mode). It can also be used as an extra
software protection mechanism, while the device is not in active use, since in this mode, the
device ignores all Write, Program and Erase instructions.
Driving Chip Select (S) High deselects the device, and puts the device in the Standby Power
mode (if there is no internal cycle currently in progress). But this mode is not the Deep
Power-down mode. The Deep Power-down mode can only be entered by executing the
Deep Power-down (DP) instruction, subsequently reducing the standby current (from I
CC1
to
I
CC2
, as specified in
Table 17
.
Once the device has entered the Deep Power-down mode, all instructions are ignored
except the Release from Deep Power-down (RDP) instruction. This releases the device from
this mode.
The Deep Power-down mode automatically stops at Power-down, and the device always
Powers-up in the Standby Power mode.
The Deep Power-down (DP) instruction is entered by driving Chip Select (S) Low, followed
by the instruction code on Serial Data Input (D). Chip Select (S) must be driven Low for the
entire duration of the sequence.
The instruction sequence is shown in
Figure 22
.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the Deep Power-down (DP) instruction is not executed. As soon as
Chip Select (S) is driven High, it requires a delay of t
DP
before the supply current is reduced
to I
CC2
and the Deep Power-down mode is entered.
Any Deep Power-down (DP) instruction, while an Erase, Program or Write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Figure 22.
Deep Power-down (DP) instruction sequence
C
D
AI03753D
S
2
1
3
4
5
6
7
0
t
DP
Deep Power-down Mode
Stand-by Mode
Instruction
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| M25PE40VMN6G | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6P | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TG | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMN6TP | 4 Mbit Uniform Sector, Serial Flash Memory |
| M25PE40VMP6G | 1A Standard Fixed Output LDO Regulators with Shutdown Switch; Package: TO220FP-5; Constitution materials list: Packing style: Tube packaging; Package quantity: 50; Minimum package quantity: 500; |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| M25PE40S-VMW6G | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Trays 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SO |
| M25PE40S-VMW6TG | 制造商:Micron Technology Inc 功能描述: 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
| M25PE40S-VMW6TG TR | 制造商:Micron Technology Inc 功能描述:IC FLASH 4MBIT 75MHZ 8SO |
| M25PE40-VMC6G | 功能描述:IC SRL FLSH 4MB 75MHZ 8MLP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:Forté™ 標準包裝:2,000 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 異步 存儲容量:256K (32K x 8) 速度:15ns 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:28-TSSOP（0.465"，11.8mm 寬） 供應(yīng)商設(shè)備封裝:28-TSOP 包裝:帶卷 (TR) 其它名稱:71V256SA15PZGI8 |
| M25PE40-VMC6TG | 制造商:Micron Technology Inc 功能描述:SERIAL NOR - Tape and Reel |
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