參數(shù)資料
型號(hào)： M25PE80-VMP6T
廠商： 意法半導(dǎo)體
元件分類： DRAM
英文描述： 4 Mbit Uniform Sector, Serial Flash Memory
中文描述： 4兆位統(tǒng)一部門，串行閃存
文件頁數(shù)： 10/43頁
文件大?。?/td> 599K
代理商： M25PE80-VMP6T
M25PE80
10/43
modification to the Write Lock and Lock
Down Bits cannot be performed. A reset,
or power-up, is required before changes to
these bits can be made. When the Lock
Down Bit is reset, ‘0’, the Write Lock and
Lock Down Bits can be changed.
The Write Lock Bit and the Lock Down Bit are
volatile and their value is reset to ‘0’ after a
Power-Down or a Reset.
The definition of the Lock Register bits is given
in
Table 8., Lock Register Out
.
Refer to
Table 3.
and
Table 4.
for details on
the Software Protection for sectors 1 to 14 and
0 and 15, respectively.
Figure 6.
shows the the
Software Protection scheme.
Table 3. Software Protection Truth Table (Sectors 1 to 14)
Table 4. Software Protection Scheme Truth Table (Sectors 0 and 15)
Note: 1. All other bits combinations are not-applicable.
2. For more details, refer to the description of the
Write to Lock Register (WRLR)
instruction.
Sector Lock
Register
Protection Status
Lock
Down
Bit
Write
Lock
Bit
0
0
Sector Unprotected from Program/Erase/Write operations, Protection Status Reversible
0
1
Sector Protected from Program/Erase/Write operations, Protection Status Reversible
1
0
Sector Unprotected from Program/Erase/Write operations,
Sector Protection Status cannot be changed except by a Reset or Power-up.
1
1
Sector Protected from Program/Erase/Write operations,
Sector Protection Status cannot be changed except by a Reset or Power-up.
Sector Lock
Register
Sub-Sector
Lock Register
Protection Status
Lock
Down
Bit
Write
Lock
Bit
Lock
Down
Bit
Write
Lock
Bit
0
0
0
0
Current Sub-Sector Unprotected from Program/Erase/Write operations,
Current Sub-Sector Protection Status Reversible
0
1
Current Sub-Sector Protected from Program/Erase/Write operations,
Current Sub-Sector Protection Status Reversible.
1
0
Current Sub-Sector Unprotected from Program/Erase/Write operations, Current
Sub-Sector Protection Status cannot be changed except by a Reset or Power-up.
1
1
Current Sub-Sector Protected from Program/Erase/Write operations, Current
Sub-Sector Protection Status cannot be changed except by a Reset or Power-up.
1
0
1
All Sub-Sectors Protected from Program/Erase/Write operations, Current Sub-
Sector Protection Status Reversible
1
1
All Sub-Sectors Protected from Program/Erase/Write operations, Current Sub-
sector Protection Status cannot be changed except by a Reset or Power-up.
1
0
1
0
Current Sub-Sector Unprotected from Program/Erase/Write operations, All Sub-
sectors Protection Status cannot be changed except by a Reset or Power-up
1
1
Current Sub-Sector Protected from Program/Erase/Write operations, All Sub-
sectors Protection Status cannot be changed except by a Reset or Power-up
1
1
1
All Sub-sectors Protected with their Protection Status cannot be changed except
by a Reset or Power-up.
相關(guān)PDF資料
PDF描述
M25PE80-VMP6TG 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMP6TP 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMP6 4 Mbit Uniform Sector, Serial Flash Memory
M25PE80-VMW6TG 4 Mbit Uniform Sector, Serial Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
M25PE80-VMP6TG 功能描述:閃存 SERIAL PAGE ERASE FLASH 8 Mbit Datas RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
M25PE80-VMP6TP 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE80-VMS6G 制造商:Micron Technology Inc 功能描述:NOR Flash Serial-SPI 3.3V 8Mbit 1M x 8bit 8ns 8-Pin QFN Tray
M25PE80-VMS6P 制造商:NUMONYX 制造商全稱:Numonyx B.V 功能描述:8-Mbit, page-erasable serial flash memory with byte alterability, 75 MHz SPI bus, standard pinout
M25PE80-VMS6TG 功能描述:IC FLASH 8MBIT 75MHZ 8QFN RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:Forté™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
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